A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver

Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, lo...

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Main Authors: Shiping Chen, Zhanqing Yu, Jiaxu Shi, Zhengyu Chen, Lu Qu, Jinpeng Wu, Rong Zeng
Format: Article
Language:English
Published: Wiley 2025-06-01
Series:High Voltage
Online Access:https://doi.org/10.1049/hve2.70051
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author Shiping Chen
Zhanqing Yu
Jiaxu Shi
Zhengyu Chen
Lu Qu
Jinpeng Wu
Rong Zeng
author_facet Shiping Chen
Zhanqing Yu
Jiaxu Shi
Zhengyu Chen
Lu Qu
Jinpeng Wu
Rong Zeng
author_sort Shiping Chen
collection DOAJ
description Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes. The current‐source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits (IC). The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division, power sequencing, and chip parameter specifications. However, existing high‐side (HS) driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal‐oxide‐semiconductor compatibility. To address these challenges, a novel HS driving topology based on floating linear regulators is proposed. It can achieve synchronised control of multi‐channel floating power transistors while supporting 100% duty cycle continuous conduction. The proposed GDMIC reduces the three independent HS power supplies to a single multiplexed topology, significantly decreasing circuit complexity. Experimental results validate the feasibility and performance of a 4‐inch gate driver prototype based on IGCT current‐source management IC, demonstrating significant advantages in reducing the number of components, enhancing device reliability, and simplifying development. The proposed GDMIC offers an innovative development path for future high‐power IGCT drivers.
format Article
id doaj-art-8cee217b5d934b7dbfee2d6e5e9c4392
institution Kabale University
issn 2397-7264
language English
publishDate 2025-06-01
publisher Wiley
record_format Article
series High Voltage
spelling doaj-art-8cee217b5d934b7dbfee2d6e5e9c43922025-08-20T03:29:58ZengWileyHigh Voltage2397-72642025-06-0110353354510.1049/hve2.70051A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driverShiping Chen0Zhanqing Yu1Jiaxu Shi2Zhengyu Chen3Lu Qu4Jinpeng Wu5Rong Zeng6Department of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDC Research Center Sichuan Energy Internet Research Institute Chengdu ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaAbstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes. The current‐source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits (IC). The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division, power sequencing, and chip parameter specifications. However, existing high‐side (HS) driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal‐oxide‐semiconductor compatibility. To address these challenges, a novel HS driving topology based on floating linear regulators is proposed. It can achieve synchronised control of multi‐channel floating power transistors while supporting 100% duty cycle continuous conduction. The proposed GDMIC reduces the three independent HS power supplies to a single multiplexed topology, significantly decreasing circuit complexity. Experimental results validate the feasibility and performance of a 4‐inch gate driver prototype based on IGCT current‐source management IC, demonstrating significant advantages in reducing the number of components, enhancing device reliability, and simplifying development. The proposed GDMIC offers an innovative development path for future high‐power IGCT drivers.https://doi.org/10.1049/hve2.70051
spellingShingle Shiping Chen
Zhanqing Yu
Jiaxu Shi
Zhengyu Chen
Lu Qu
Jinpeng Wu
Rong Zeng
A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
High Voltage
title A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
title_full A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
title_fullStr A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
title_full_unstemmed A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
title_short A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
title_sort novel current source management integrated circuit applied to high voltage integrated gate commutated thyristor gate driver
url https://doi.org/10.1049/hve2.70051
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