A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver
Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, lo...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2025-06-01
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| Series: | High Voltage |
| Online Access: | https://doi.org/10.1049/hve2.70051 |
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| _version_ | 1849424817649876992 |
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| author | Shiping Chen Zhanqing Yu Jiaxu Shi Zhengyu Chen Lu Qu Jinpeng Wu Rong Zeng |
| author_facet | Shiping Chen Zhanqing Yu Jiaxu Shi Zhengyu Chen Lu Qu Jinpeng Wu Rong Zeng |
| author_sort | Shiping Chen |
| collection | DOAJ |
| description | Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes. The current‐source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits (IC). The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division, power sequencing, and chip parameter specifications. However, existing high‐side (HS) driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal‐oxide‐semiconductor compatibility. To address these challenges, a novel HS driving topology based on floating linear regulators is proposed. It can achieve synchronised control of multi‐channel floating power transistors while supporting 100% duty cycle continuous conduction. The proposed GDMIC reduces the three independent HS power supplies to a single multiplexed topology, significantly decreasing circuit complexity. Experimental results validate the feasibility and performance of a 4‐inch gate driver prototype based on IGCT current‐source management IC, demonstrating significant advantages in reducing the number of components, enhancing device reliability, and simplifying development. The proposed GDMIC offers an innovative development path for future high‐power IGCT drivers. |
| format | Article |
| id | doaj-art-8cee217b5d934b7dbfee2d6e5e9c4392 |
| institution | Kabale University |
| issn | 2397-7264 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | High Voltage |
| spelling | doaj-art-8cee217b5d934b7dbfee2d6e5e9c43922025-08-20T03:29:58ZengWileyHigh Voltage2397-72642025-06-0110353354510.1049/hve2.70051A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driverShiping Chen0Zhanqing Yu1Jiaxu Shi2Zhengyu Chen3Lu Qu4Jinpeng Wu5Rong Zeng6Department of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDC Research Center Sichuan Energy Internet Research Institute Chengdu ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaDepartment of Electrical Engineering Tsinghua University Beijing ChinaAbstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes. The current‐source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits (IC). The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division, power sequencing, and chip parameter specifications. However, existing high‐side (HS) driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal‐oxide‐semiconductor compatibility. To address these challenges, a novel HS driving topology based on floating linear regulators is proposed. It can achieve synchronised control of multi‐channel floating power transistors while supporting 100% duty cycle continuous conduction. The proposed GDMIC reduces the three independent HS power supplies to a single multiplexed topology, significantly decreasing circuit complexity. Experimental results validate the feasibility and performance of a 4‐inch gate driver prototype based on IGCT current‐source management IC, demonstrating significant advantages in reducing the number of components, enhancing device reliability, and simplifying development. The proposed GDMIC offers an innovative development path for future high‐power IGCT drivers.https://doi.org/10.1049/hve2.70051 |
| spellingShingle | Shiping Chen Zhanqing Yu Jiaxu Shi Zhengyu Chen Lu Qu Jinpeng Wu Rong Zeng A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver High Voltage |
| title | A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver |
| title_full | A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver |
| title_fullStr | A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver |
| title_full_unstemmed | A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver |
| title_short | A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver |
| title_sort | novel current source management integrated circuit applied to high voltage integrated gate commutated thyristor gate driver |
| url | https://doi.org/10.1049/hve2.70051 |
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