RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS
In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the...
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| Format: | Article |
| Language: | English |
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Dalat University
2024-03-01
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| Series: | Tạp chí Khoa học Đại học Đà Lạt |
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| Online Access: | https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232 |
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| _version_ | 1823857071141945344 |
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| author | Van Chinh Ngo Nguyen Huu Hanh Pham Thi Kim Quyen Nguyen Thi Kim Loan Phan Thanh Tra Vu |
| author_facet | Van Chinh Ngo Nguyen Huu Hanh Pham Thi Kim Quyen Nguyen Thi Kim Loan Phan Thanh Tra Vu |
| author_sort | Van Chinh Ngo |
| collection | DOAJ |
| description | In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the first- and second-order interaction parameters of two atoms of the same type play an important role in the electronic properties of this material. Vacancies near the edge have a stronger effect than those near the center of the ribbons. We further show that each type of divacancy will give a different result under the influence of a perpendicular electric field. This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries.
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| format | Article |
| id | doaj-art-8c346c5bcaa841bfabdefc376791dd02 |
| institution | Kabale University |
| issn | 0866-787X |
| language | English |
| publishDate | 2024-03-01 |
| publisher | Dalat University |
| record_format | Article |
| series | Tạp chí Khoa học Đại học Đà Lạt |
| spelling | doaj-art-8c346c5bcaa841bfabdefc376791dd022025-02-12T01:00:58ZengDalat UniversityTạp chí Khoa học Đại học Đà Lạt0866-787X2024-03-01143S10.37569/DalatUniversity.14.3S.1232(2024)1287RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONSVan Chinh Ngo0https://orcid.org/0009-0009-7114-1197Nguyen Huu Hanh Pham1https://orcid.org/0009-0000-1277-372XThi Kim Quyen Nguyen2https://orcid.org/0009-0007-6433-0163Thi Kim Loan Phan3https://orcid.org/0009-0003-3509-6508Thanh Tra Vu4https://orcid.org/0000-0003-2866-1903College of Natural Sciences, Can Tho UniversityCollege of Natural Sciences, Can Tho UniversityCollege of Natural Sciences, Can Tho University; Kien Giang UniversitySchool of Education, Can Tho UniversitySchool of Education, Can Tho University, Vietnam; National Yangming Chiaotung UniversityIn this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the first- and second-order interaction parameters of two atoms of the same type play an important role in the electronic properties of this material. Vacancies near the edge have a stronger effect than those near the center of the ribbons. We further show that each type of divacancy will give a different result under the influence of a perpendicular electric field. This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232Buckled silicene nanoribbonsDivacancyElectric fieldElectronic structureTight binding. |
| spellingShingle | Van Chinh Ngo Nguyen Huu Hanh Pham Thi Kim Quyen Nguyen Thi Kim Loan Phan Thanh Tra Vu RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS Tạp chí Khoa học Đại học Đà Lạt Buckled silicene nanoribbons Divacancy Electric field Electronic structure Tight binding. |
| title | RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
| title_full | RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
| title_fullStr | RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
| title_full_unstemmed | RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
| title_short | RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
| title_sort | reconstruction of divacancy in zigzag buckled silicene nanoribbons |
| topic | Buckled silicene nanoribbons Divacancy Electric field Electronic structure Tight binding. |
| url | https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232 |
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