Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier
This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semicondu...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-01-01
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| Series: | Journal of Electrical and Computer Engineering |
| Online Access: | http://dx.doi.org/10.1155/2023/1941232 |
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| author | Baqer O. Al-Nashy Buraq T. Sh. Al-Mosawi Mushtaq Obaid Oleiwi Amin H. Al-Khursan |
| author_facet | Baqer O. Al-Nashy Buraq T. Sh. Al-Mosawi Mushtaq Obaid Oleiwi Amin H. Al-Khursan |
| author_sort | Baqer O. Al-Nashy |
| collection | DOAJ |
| description | This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications. |
| format | Article |
| id | doaj-art-8ad979a5ec5947a5912cbffaf6e2a625 |
| institution | OA Journals |
| issn | 2090-0155 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Electrical and Computer Engineering |
| spelling | doaj-art-8ad979a5ec5947a5912cbffaf6e2a6252025-08-20T02:09:24ZengWileyJournal of Electrical and Computer Engineering2090-01552023-01-01202310.1155/2023/1941232Gain of TlBr/BrCl Quantum Dot Semiconductor Optical AmplifierBaqer O. Al-Nashy0Buraq T. Sh. Al-Mosawi1Mushtaq Obaid Oleiwi2Amin H. Al-Khursan3Department of PhysicsCollege of EducationDepartment of PhysicsNasiriya Nanotechnology Research Laboratory (NNRL)This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.http://dx.doi.org/10.1155/2023/1941232 |
| spellingShingle | Baqer O. Al-Nashy Buraq T. Sh. Al-Mosawi Mushtaq Obaid Oleiwi Amin H. Al-Khursan Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier Journal of Electrical and Computer Engineering |
| title | Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier |
| title_full | Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier |
| title_fullStr | Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier |
| title_full_unstemmed | Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier |
| title_short | Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier |
| title_sort | gain of tlbr brcl quantum dot semiconductor optical amplifier |
| url | http://dx.doi.org/10.1155/2023/1941232 |
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