2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. Aft...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10373932/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832583238555533312 |
|---|---|
| author | Bing Qiao Pengfei Dai Xinxin Yu Zhonghui Li Ran Tao Jianjun Zhou Rui Shen Tangsheng Chen |
| author_facet | Bing Qiao Pengfei Dai Xinxin Yu Zhonghui Li Ran Tao Jianjun Zhou Rui Shen Tangsheng Chen |
| author_sort | Bing Qiao |
| collection | DOAJ |
| description | This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. After passivation, a low ohmic contact resistance <inline-formula> <tex-math notation="LaTeX">$R_{c}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$0.5 \Omega \cdot $ </tex-math></inline-formula>mm was obtained and the 2DHG sheet density was as high as <inline-formula> <tex-math notation="LaTeX">$1.0\times 10\,\,^{\mathrm{ 13}}\,\,{\mathrm{ cm}}^{-2}$ </tex-math></inline-formula> with a corresponding mobility of <inline-formula> <tex-math notation="LaTeX">$104 {\mathrm{ cm}}^{2} /\text{V}\cdot \text{s}$ </tex-math></inline-formula>. The fabricated diamond MOSFET with gate length of <inline-formula> <tex-math notation="LaTeX">$0.5 ~\mu \text{m}$ </tex-math></inline-formula> showcased a high current density of 750 mA/mm, a low on-resistance of <inline-formula> <tex-math notation="LaTeX">$24 \Omega \cdot $ </tex-math></inline-formula>mm, and a high off-state breakdown voltage of 117 V. Thanks to the high current density and low on-resistance, a record high output power density of 2.1 W/mm was achieved at 10 GHz with drain biased at a low voltage of −30 V. These results demonstrate that the output current and output power can be improved by using a (111)-oriented diamond, which is benefit for high-frequency and high-power RF devices. |
| format | Article |
| id | doaj-art-8aae63e2ddb24af2a399362806cd0da3 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-8aae63e2ddb24af2a399362806cd0da32025-01-29T00:00:09ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-0112515510.1109/JEDS.2023.3347049103739322.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented SurfaceBing Qiao0Pengfei Dai1Xinxin Yu2https://orcid.org/0000-0003-0898-8837Zhonghui Li3Ran Tao4Jianjun Zhou5Rui Shen6Tangsheng Chen7Nanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaNanjing Electronic Devices Institute, Nanjing, ChinaThis paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. After passivation, a low ohmic contact resistance <inline-formula> <tex-math notation="LaTeX">$R_{c}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$0.5 \Omega \cdot $ </tex-math></inline-formula>mm was obtained and the 2DHG sheet density was as high as <inline-formula> <tex-math notation="LaTeX">$1.0\times 10\,\,^{\mathrm{ 13}}\,\,{\mathrm{ cm}}^{-2}$ </tex-math></inline-formula> with a corresponding mobility of <inline-formula> <tex-math notation="LaTeX">$104 {\mathrm{ cm}}^{2} /\text{V}\cdot \text{s}$ </tex-math></inline-formula>. The fabricated diamond MOSFET with gate length of <inline-formula> <tex-math notation="LaTeX">$0.5 ~\mu \text{m}$ </tex-math></inline-formula> showcased a high current density of 750 mA/mm, a low on-resistance of <inline-formula> <tex-math notation="LaTeX">$24 \Omega \cdot $ </tex-math></inline-formula>mm, and a high off-state breakdown voltage of 117 V. Thanks to the high current density and low on-resistance, a record high output power density of 2.1 W/mm was achieved at 10 GHz with drain biased at a low voltage of −30 V. These results demonstrate that the output current and output power can be improved by using a (111)-oriented diamond, which is benefit for high-frequency and high-power RF devices.https://ieeexplore.ieee.org/document/10373932/Hydrogen-terminated(111)-oriented diamondoutput power |
| spellingShingle | Bing Qiao Pengfei Dai Xinxin Yu Zhonghui Li Ran Tao Jianjun Zhou Rui Shen Tangsheng Chen 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface IEEE Journal of the Electron Devices Society Hydrogen-terminated (111)-oriented diamond output power |
| title | 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface |
| title_full | 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface |
| title_fullStr | 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface |
| title_full_unstemmed | 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface |
| title_short | 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface |
| title_sort | 2 1 w mm output power density at 10 ghz for h terminated diamond mosfets with 111 oriented surface |
| topic | Hydrogen-terminated (111)-oriented diamond output power |
| url | https://ieeexplore.ieee.org/document/10373932/ |
| work_keys_str_mv | AT bingqiao 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT pengfeidai 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT xinxinyu 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT zhonghuili 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT rantao 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT jianjunzhou 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT ruishen 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface AT tangshengchen 21wmmoutputpowerdensityat10ghzforhterminateddiamondmosfetswith111orientedsurface |