APA (7th ed.) Citation

Qiao, B., Dai, P., Yu, X., Li, Z., Tao, R., Zhou, J., . . . Chen, T. 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface. IEEE.

Chicago Style (17th ed.) Citation

Qiao, Bing, Pengfei Dai, Xinxin Yu, Zhonghui Li, Ran Tao, Jianjun Zhou, Rui Shen, and Tangsheng Chen. 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface. IEEE.

MLA (9th ed.) Citation

Qiao, Bing, et al. 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface. IEEE.