Two-dimensional transition metal dichalcogenides for post-silicon electronics
Rapid advancements in information technology push the explosive growth in data volume, requiring greater computing-capability logic circuits. However, conventional computing-capability improving technology, which mainly relies on increasing transistor number, encounters a significant challenge due t...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Science Press
2023-06-01
|
| Series: | National Science Open |
| Subjects: | |
| Online Access: | https://www.sciengine.com/doi/10.1360/nso/20230015 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850235154570674176 |
|---|---|
| author | Zhang Xiankun Zhao Hang Wei Xiaofu Zhang Yanzhe Zhang Zheng Zhang Yue |
| author_facet | Zhang Xiankun Zhao Hang Wei Xiaofu Zhang Yanzhe Zhang Zheng Zhang Yue |
| author_sort | Zhang Xiankun |
| collection | DOAJ |
| description | Rapid advancements in information technology push the explosive growth in data volume, requiring greater computing-capability logic circuits. However, conventional computing-capability improving technology, which mainly relies on increasing transistor number, encounters a significant challenge due to the weak field-effect characteristics of bulk silicon-based semiconductors. Still, the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides (2D-TMDCs) materials enable excellent field-effect characteristics and multiple gate control ports, facilitating the integration of the functions of multiple transistors into one. Generally, the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor numbers. In other words, one can only use a small number, or even just one, 2D-TMDCs-based transistors to conduct the sophisticated logic operations that have to be realized by using many traditional transistors. In this review, from material selection, device structure optimization, and circuit architecture design, we discuss the developments, challenges, and prospects for 2D-TMDCs-based logic circuits. |
| format | Article |
| id | doaj-art-8a8b95a612054fd390fe067d3129e44a |
| institution | OA Journals |
| issn | 2097-1168 |
| language | English |
| publishDate | 2023-06-01 |
| publisher | Science Press |
| record_format | Article |
| series | National Science Open |
| spelling | doaj-art-8a8b95a612054fd390fe067d3129e44a2025-08-20T02:02:21ZengScience PressNational Science Open2097-11682023-06-01210.1360/nso/20230015eb33e642Two-dimensional transition metal dichalcogenides for post-silicon electronicsZhang Xiankun0Zhao Hang1Wei Xiaofu2Zhang Yanzhe3Zhang Zheng4Zhang Yue5["Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China","Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China"]["Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China","Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China"]["Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China","Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China"]["Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China","Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China"]["Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China","Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China"]["Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China","Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China"]Rapid advancements in information technology push the explosive growth in data volume, requiring greater computing-capability logic circuits. However, conventional computing-capability improving technology, which mainly relies on increasing transistor number, encounters a significant challenge due to the weak field-effect characteristics of bulk silicon-based semiconductors. Still, the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides (2D-TMDCs) materials enable excellent field-effect characteristics and multiple gate control ports, facilitating the integration of the functions of multiple transistors into one. Generally, the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor numbers. In other words, one can only use a small number, or even just one, 2D-TMDCs-based transistors to conduct the sophisticated logic operations that have to be realized by using many traditional transistors. In this review, from material selection, device structure optimization, and circuit architecture design, we discuss the developments, challenges, and prospects for 2D-TMDCs-based logic circuits.https://www.sciengine.com/doi/10.1360/nso/20230015logic circuitstwo-dimensional transition metal dichalcogenidescomputing capabilitypost-silicon electronicstransistor number |
| spellingShingle | Zhang Xiankun Zhao Hang Wei Xiaofu Zhang Yanzhe Zhang Zheng Zhang Yue Two-dimensional transition metal dichalcogenides for post-silicon electronics National Science Open logic circuits two-dimensional transition metal dichalcogenides computing capability post-silicon electronics transistor number |
| title | Two-dimensional transition metal dichalcogenides for post-silicon electronics |
| title_full | Two-dimensional transition metal dichalcogenides for post-silicon electronics |
| title_fullStr | Two-dimensional transition metal dichalcogenides for post-silicon electronics |
| title_full_unstemmed | Two-dimensional transition metal dichalcogenides for post-silicon electronics |
| title_short | Two-dimensional transition metal dichalcogenides for post-silicon electronics |
| title_sort | two dimensional transition metal dichalcogenides for post silicon electronics |
| topic | logic circuits two-dimensional transition metal dichalcogenides computing capability post-silicon electronics transistor number |
| url | https://www.sciengine.com/doi/10.1360/nso/20230015 |
| work_keys_str_mv | AT zhangxiankun twodimensionaltransitionmetaldichalcogenidesforpostsiliconelectronics AT zhaohang twodimensionaltransitionmetaldichalcogenidesforpostsiliconelectronics AT weixiaofu twodimensionaltransitionmetaldichalcogenidesforpostsiliconelectronics AT zhangyanzhe twodimensionaltransitionmetaldichalcogenidesforpostsiliconelectronics AT zhangzheng twodimensionaltransitionmetaldichalcogenidesforpostsiliconelectronics AT zhangyue twodimensionaltransitionmetaldichalcogenidesforpostsiliconelectronics |