Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review
Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance. Two-dimensiona...
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| Format: | Article |
| Language: | English |
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Science Press
2023-07-01
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| Series: | National Science Open |
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| Online Access: | https://www.sciengine.com/doi/10.1360/nso/20220068 |
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| author | Liu Zhetong Liu Bingyao Chen Zhaolong Yang Shenyuan Liu Zhiqiang Wei Tongbo Gao Peng Liu Zhongfan |
| author_facet | Liu Zhetong Liu Bingyao Chen Zhaolong Yang Shenyuan Liu Zhiqiang Wei Tongbo Gao Peng Liu Zhongfan |
| author_sort | Liu Zhetong |
| collection | DOAJ |
| description | Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance. Two-dimensional (2D) material-assisted heteroepitaxy offers an effective solution to these challenges. The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics. Herein, we summarize the modes of 2D material-assisted epitaxy, which can be classified into remote epitaxy, pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates. Furthermore, we discuss in detail the improved crystal quality and functional applications, such as flexible devices, wavelength-modulated optoelectronic devices, and thermal management in high-power devices. Moreover, we highlight the challenges and prospects of 2D material-assisted epitaxy, providing roadmaps for lateral research and semiconductor production. |
| format | Article |
| id | doaj-art-8a7eca1c0f814603b67c0aa90e3dee0f |
| institution | DOAJ |
| issn | 2097-1168 |
| language | English |
| publishDate | 2023-07-01 |
| publisher | Science Press |
| record_format | Article |
| series | National Science Open |
| spelling | doaj-art-8a7eca1c0f814603b67c0aa90e3dee0f2025-08-20T03:15:27ZengScience PressNational Science Open2097-11682023-07-01210.1360/nso/20220068eb33e642Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a reviewLiu Zhetong0Liu Bingyao1Chen Zhaolong2Yang Shenyuan3Liu Zhiqiang4Wei Tongbo5Gao Peng6Liu Zhongfan7["Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China","Beijing Graphene Institute (BGI), Beijing 100095, China","Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China"]["Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China","Beijing Graphene Institute (BGI), Beijing 100095, China","Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China"]["Beijing Graphene Institute (BGI), Beijing 100095, China","Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China","Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore"]["State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"]["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"]["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"]["Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China","Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China","Collaborative Innovation Center of Quantum Matter, Beijing 100871, China"]["Beijing Graphene Institute (BGI), Beijing 100095, China","Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China"]Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance. Two-dimensional (2D) material-assisted heteroepitaxy offers an effective solution to these challenges. The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics. Herein, we summarize the modes of 2D material-assisted epitaxy, which can be classified into remote epitaxy, pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates. Furthermore, we discuss in detail the improved crystal quality and functional applications, such as flexible devices, wavelength-modulated optoelectronic devices, and thermal management in high-power devices. Moreover, we highlight the challenges and prospects of 2D material-assisted epitaxy, providing roadmaps for lateral research and semiconductor production.https://www.sciengine.com/doi/10.1360/nso/20220068graphene2D materialsheteroepitaxyremote epitaxypinhole epitaxyvan der Waals epitaxy |
| spellingShingle | Liu Zhetong Liu Bingyao Chen Zhaolong Yang Shenyuan Liu Zhiqiang Wei Tongbo Gao Peng Liu Zhongfan Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review National Science Open graphene 2D materials heteroepitaxy remote epitaxy pinhole epitaxy van der Waals epitaxy |
| title | Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review |
| title_full | Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review |
| title_fullStr | Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review |
| title_full_unstemmed | Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review |
| title_short | Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review |
| title_sort | two dimensional material assisted remote epitaxy and van der waals epitaxy a review |
| topic | graphene 2D materials heteroepitaxy remote epitaxy pinhole epitaxy van der Waals epitaxy |
| url | https://www.sciengine.com/doi/10.1360/nso/20220068 |
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