Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics
Abstract Transfer printing techniques have enabled the fabrication of devices on soft or delicate substrates that are incompatible with conventional manufacturing processes. However, the involved sacrifice-layer removal process typically causes damage to the quality of device interfaces. Here, we de...
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Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-60864-5 |
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| author | Yuyu He Zunxian Lv Zhaochao Liu Mingjian Yang Wei Ai Jiabiao Chen Wanying Chen Bing Wang Xuewen Fu Feng Luo Jinxiong Wu |
| author_facet | Yuyu He Zunxian Lv Zhaochao Liu Mingjian Yang Wei Ai Jiabiao Chen Wanying Chen Bing Wang Xuewen Fu Feng Luo Jinxiong Wu |
| author_sort | Yuyu He |
| collection | DOAJ |
| description | Abstract Transfer printing techniques have enabled the fabrication of devices on soft or delicate substrates that are incompatible with conventional manufacturing processes. However, the involved sacrifice-layer removal process typically causes damage to the quality of device interfaces. Here, we develop a sacrifice-layer-free transfer printing strategy by pre-depositing the device constituents onto commercially available mica substrates. The intrinsic weak interfacial interaction enables the transfer of various pre-deposited device constituents at the wafer scale, including well-known strongly adhesive dielectrics grown by atomic layer deposition (ALD). Moreover, entire top-gated device stacks can be simultaneously transferred onto few-layer MoS2 to form fully gated two-dimensional (2D) transistors, showing an atomically sharp interface, negligible gate hysteresis (~5 mV) and subthreshold swings near the thermionic limit. Importantly, the conformal growth of ALD dielectrics enables the one-step fabrication of complex top-gated Hall devices with a fully encapsulated structure, allowing multi-terminal gate-tunable transport measurements on fragile 2D materials, such as black phosphorus. Our work not only enriches the transfer printing methodologies for difficult-to-transfer materials, but also provides a method to investigate the properties of fragile 2D materials. |
| format | Article |
| id | doaj-art-8a6789e785ff4cb58b38bb9774ffcd6f |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-8a6789e785ff4cb58b38bb9774ffcd6f2025-08-20T03:45:35ZengNature PortfolioNature Communications2041-17232025-07-011611910.1038/s41467-025-60864-5Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronicsYuyu He0Zunxian Lv1Zhaochao Liu2Mingjian Yang3Wei Ai4Jiabiao Chen5Wanying Chen6Bing Wang7Xuewen Fu8Feng Luo9Jinxiong Wu10Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityUltrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai UniversityAbstract Transfer printing techniques have enabled the fabrication of devices on soft or delicate substrates that are incompatible with conventional manufacturing processes. However, the involved sacrifice-layer removal process typically causes damage to the quality of device interfaces. Here, we develop a sacrifice-layer-free transfer printing strategy by pre-depositing the device constituents onto commercially available mica substrates. The intrinsic weak interfacial interaction enables the transfer of various pre-deposited device constituents at the wafer scale, including well-known strongly adhesive dielectrics grown by atomic layer deposition (ALD). Moreover, entire top-gated device stacks can be simultaneously transferred onto few-layer MoS2 to form fully gated two-dimensional (2D) transistors, showing an atomically sharp interface, negligible gate hysteresis (~5 mV) and subthreshold swings near the thermionic limit. Importantly, the conformal growth of ALD dielectrics enables the one-step fabrication of complex top-gated Hall devices with a fully encapsulated structure, allowing multi-terminal gate-tunable transport measurements on fragile 2D materials, such as black phosphorus. Our work not only enriches the transfer printing methodologies for difficult-to-transfer materials, but also provides a method to investigate the properties of fragile 2D materials.https://doi.org/10.1038/s41467-025-60864-5 |
| spellingShingle | Yuyu He Zunxian Lv Zhaochao Liu Mingjian Yang Wei Ai Jiabiao Chen Wanying Chen Bing Wang Xuewen Fu Feng Luo Jinxiong Wu Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics Nature Communications |
| title | Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics |
| title_full | Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics |
| title_fullStr | Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics |
| title_full_unstemmed | Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics |
| title_short | Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics |
| title_sort | sacrifice layer free transfer of wafer scale atomic layer deposited dielectrics and full device stacks for two dimensional electronics |
| url | https://doi.org/10.1038/s41467-025-60864-5 |
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