Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics
Abstract Transfer printing techniques have enabled the fabrication of devices on soft or delicate substrates that are incompatible with conventional manufacturing processes. However, the involved sacrifice-layer removal process typically causes damage to the quality of device interfaces. Here, we de...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-60864-5 |
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| Summary: | Abstract Transfer printing techniques have enabled the fabrication of devices on soft or delicate substrates that are incompatible with conventional manufacturing processes. However, the involved sacrifice-layer removal process typically causes damage to the quality of device interfaces. Here, we develop a sacrifice-layer-free transfer printing strategy by pre-depositing the device constituents onto commercially available mica substrates. The intrinsic weak interfacial interaction enables the transfer of various pre-deposited device constituents at the wafer scale, including well-known strongly adhesive dielectrics grown by atomic layer deposition (ALD). Moreover, entire top-gated device stacks can be simultaneously transferred onto few-layer MoS2 to form fully gated two-dimensional (2D) transistors, showing an atomically sharp interface, negligible gate hysteresis (~5 mV) and subthreshold swings near the thermionic limit. Importantly, the conformal growth of ALD dielectrics enables the one-step fabrication of complex top-gated Hall devices with a fully encapsulated structure, allowing multi-terminal gate-tunable transport measurements on fragile 2D materials, such as black phosphorus. Our work not only enriches the transfer printing methodologies for difficult-to-transfer materials, but also provides a method to investigate the properties of fragile 2D materials. |
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| ISSN: | 2041-1723 |