Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling
Back-illuminated Al<sub>0.1</sub>Ga<sub>0.9</sub>N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device...
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8703083/ |
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| author | Qing Cai Qian Li Mo Li Yin Tang Jin Wang Junjun Xue Dunjun Chen Hai Lu Rong Zhang Youdou Zheng |
| author_facet | Qing Cai Qian Li Mo Li Yin Tang Jin Wang Junjun Xue Dunjun Chen Hai Lu Rong Zhang Youdou Zheng |
| author_sort | Qing Cai |
| collection | DOAJ |
| description | Back-illuminated Al<sub>0.1</sub>Ga<sub>0.9</sub>N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 × 10<sup>4</sup>, higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties. |
| format | Article |
| id | doaj-art-8a64ee7aed0440439ee8fb8307ffc24b |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-8a64ee7aed0440439ee8fb8307ffc24b2025-08-20T02:44:40ZengIEEEIEEE Photonics Journal1943-06552019-01-011131710.1109/JPHOT.2019.29141468703083Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication ScalingQing Cai0https://orcid.org/0000-0002-4625-4714Qian Li1Mo Li2Yin Tang3https://orcid.org/0000-0002-4975-0596Jin Wang4https://orcid.org/0000-0002-9881-7208Junjun Xue5Dunjun Chen6https://orcid.org/0000-0002-1363-1413Hai Lu7https://orcid.org/0000-0002-9835-6763Rong Zhang8Youdou Zheng9Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaMicrosystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, ChinaMicrosystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaBack-illuminated Al<sub>0.1</sub>Ga<sub>0.9</sub>N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 × 10<sup>4</sup>, higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties.https://ieeexplore.ieee.org/document/8703083/AlGaNultravioletavalanche photodiodesmultiplication scaling |
| spellingShingle | Qing Cai Qian Li Mo Li Yin Tang Jin Wang Junjun Xue Dunjun Chen Hai Lu Rong Zhang Youdou Zheng Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling IEEE Photonics Journal AlGaN ultraviolet avalanche photodiodes multiplication scaling |
| title | Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling |
| title_full | Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling |
| title_fullStr | Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling |
| title_full_unstemmed | Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling |
| title_short | Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling |
| title_sort | performance modulation for back illuminated algan ultraviolet avalanche photodiodes based on multiplication scaling |
| topic | AlGaN ultraviolet avalanche photodiodes multiplication scaling |
| url | https://ieeexplore.ieee.org/document/8703083/ |
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