DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE
Simulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level NA base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 micron...
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| Format: | Article |
| Language: | Russian |
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North Caucasus Federal University
2022-05-01
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| Series: | Вестник Северо-Кавказского федерального университета |
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| Online Access: | https://vestnikskfu.elpub.ru/jour/article/view/1065 |
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| author | David Arustamyan Sergei Chebotarev Marina Lunina Igor Sysoev Aleksandr Pashchenko Alena Kazakova Alexey Yatsenko |
| author_facet | David Arustamyan Sergei Chebotarev Marina Lunina Igor Sysoev Aleksandr Pashchenko Alena Kazakova Alexey Yatsenko |
| author_sort | David Arustamyan |
| collection | DOAJ |
| description | Simulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level NA base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 microns to 33,03 % at 10 microns. Open circuit voltage Uoc, by increasing the thickness of the base from 1 to 50 microns increased by 95 mV. Increasing the doping level of the base leads to an increase short circuit current from 13,91 to 23,34 mA/cm2. The open circuit voltage will be increased from 1.487 to 1.594 V. |
| format | Article |
| id | doaj-art-8a5aa70871ff4b40911b58e3f9c682ad |
| institution | DOAJ |
| issn | 2307-907X |
| language | Russian |
| publishDate | 2022-05-01 |
| publisher | North Caucasus Federal University |
| record_format | Article |
| series | Вестник Северо-Кавказского федерального университета |
| spelling | doaj-art-8a5aa70871ff4b40911b58e3f9c682ad2025-08-20T03:19:16ZrusNorth Caucasus Federal UniversityВестник Северо-Кавказского федерального университета2307-907X2022-05-01047121063DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASEDavid Arustamyan0Sergei Chebotarev1Marina Lunina2Igor Sysoev3Aleksandr Pashchenko4Alena Kazakova5Alexey Yatsenko6South-Russian state Polytechnic University (NPI) named after M. I. PlatovSouth-Russian state Polytechnic University (NPI) named after M. I. PlatovRussian Academy of SciencesNorth Caucasus Federal UniversityRussian Academy of SciencesSouth-Russian state Polytechnic University (NPI) named after M. I. PlatovSouth-Russian state Polytechnic University (NPI) named after M. I. PlatovSimulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level NA base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 microns to 33,03 % at 10 microns. Open circuit voltage Uoc, by increasing the thickness of the base from 1 to 50 microns increased by 95 mV. Increasing the doping level of the base leads to an increase short circuit current from 13,91 to 23,34 mA/cm2. The open circuit voltage will be increased from 1.487 to 1.594 V.https://vestnikskfu.elpub.ru/jour/article/view/1065солнечные элементыфотоэлектрические преобразователивольтамперная характеристикавнешний квантовый выходsolar cellsphotovoltaiccurrent-voltage characteristicexternal quantum efficiency |
| spellingShingle | David Arustamyan Sergei Chebotarev Marina Lunina Igor Sysoev Aleksandr Pashchenko Alena Kazakova Alexey Yatsenko DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE Вестник Северо-Кавказского федерального университета солнечные элементы фотоэлектрические преобразователи вольтамперная характеристика внешний квантовый выход solar cells photovoltaic current-voltage characteristic external quantum efficiency |
| title | DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE |
| title_full | DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE |
| title_fullStr | DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE |
| title_full_unstemmed | DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE |
| title_short | DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE |
| title_sort | dependence of characterictics of algaas based solar cell on thickness and doping level base |
| topic | солнечные элементы фотоэлектрические преобразователи вольтамперная характеристика внешний квантовый выход solar cells photovoltaic current-voltage characteristic external quantum efficiency |
| url | https://vestnikskfu.elpub.ru/jour/article/view/1065 |
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