DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE
Simulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level NA base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 micron...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
North Caucasus Federal University
2022-05-01
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| Series: | Вестник Северо-Кавказского федерального университета |
| Subjects: | |
| Online Access: | https://vestnikskfu.elpub.ru/jour/article/view/1065 |
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| Summary: | Simulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level NA base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 microns to 33,03 % at 10 microns. Open circuit voltage Uoc, by increasing the thickness of the base from 1 to 50 microns increased by 95 mV. Increasing the doping level of the base leads to an increase short circuit current from 13,91 to 23,34 mA/cm2. The open circuit voltage will be increased from 1.487 to 1.594 V. |
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| ISSN: | 2307-907X |