A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing

Neuromorphic computing devices offer promising solutions for next‐generation computing hardware, addressing the high throughput data processing demands of artificial intelligence applications through brain‐mimicking non‐von Neumann architecture. Herein, PEDOT:Tos/PTHF‐based organic electrochemical t...

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Main Authors: Yuyang Yin, Shaocong Wang, Ruihong Weng, Na Xiao, Jianni Deng, Qian Wang, Zhongrui Wang, Paddy Kwok Leung Chan
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Small Science
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Online Access:https://doi.org/10.1002/smsc.202400415
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author Yuyang Yin
Shaocong Wang
Ruihong Weng
Na Xiao
Jianni Deng
Qian Wang
Zhongrui Wang
Paddy Kwok Leung Chan
author_facet Yuyang Yin
Shaocong Wang
Ruihong Weng
Na Xiao
Jianni Deng
Qian Wang
Zhongrui Wang
Paddy Kwok Leung Chan
author_sort Yuyang Yin
collection DOAJ
description Neuromorphic computing devices offer promising solutions for next‐generation computing hardware, addressing the high throughput data processing demands of artificial intelligence applications through brain‐mimicking non‐von Neumann architecture. Herein, PEDOT:Tos/PTHF‐based organic electrochemical transistors (OECTs) with dual‐modal memory functions—both short‐term and long‐term—are demonstrated. By characterizing memory levels and relaxation times, the device has been efficiently manipulated and switched between the two modes through coupled control of pulse voltage and duration. Both short‐term and long‐term memory functions are integrated within the same device, enabling its use as artificial neurons for the reservoir unit and synapses in the readout layer to build up a reservoir computing (RC) system. The performance of the dynamic neuron and synaptic weight update are benchmarked with classification tasks on hand‐written digit images, respectively, both attaining accuracies above 90%. Furthermore, by modulating the device as both reservoir mode and synaptic mode, a full‐OECT RC system capable of distinguishing electromyography signals of hand gestures is demonstrated. These results highlight the potential of simplified, homogeneous integration of dual‐modal OECTs to form brain‐like computing hardware systems for efficient biological signal processing across a broad range of applications.
format Article
id doaj-art-8a0b2062f99d4cb7a5e2b881f5a7234e
institution DOAJ
issn 2688-4046
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publishDate 2025-01-01
publisher Wiley-VCH
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spelling doaj-art-8a0b2062f99d4cb7a5e2b881f5a7234e2025-08-20T02:51:16ZengWiley-VCHSmall Science2688-40462025-01-0151n/an/a10.1002/smsc.202400415A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir ComputingYuyang Yin0Shaocong Wang1Ruihong Weng2Na Xiao3Jianni Deng4Qian Wang5Zhongrui Wang6Paddy Kwok Leung Chan7Department of Mechanical Engineering The University of Hong Kong Hong Kong SAR ChinaDepartment of Electrical and Electronic Engineering The University of Hong Kong Hong Kong SAR ChinaDepartment of Mechanical Engineering The University of Hong Kong Hong Kong SAR ChinaAdvanced Biomedical Instrumentation Centre Hong Kong SAR ChinaDepartment of Mechanical Engineering The University of Hong Kong Hong Kong SAR ChinaDepartment of Mechanical Engineering The University of Hong Kong Hong Kong SAR ChinaDepartment of Electrical and Electronic Engineering The University of Hong Kong Hong Kong SAR ChinaDepartment of Mechanical Engineering The University of Hong Kong Hong Kong SAR ChinaNeuromorphic computing devices offer promising solutions for next‐generation computing hardware, addressing the high throughput data processing demands of artificial intelligence applications through brain‐mimicking non‐von Neumann architecture. Herein, PEDOT:Tos/PTHF‐based organic electrochemical transistors (OECTs) with dual‐modal memory functions—both short‐term and long‐term—are demonstrated. By characterizing memory levels and relaxation times, the device has been efficiently manipulated and switched between the two modes through coupled control of pulse voltage and duration. Both short‐term and long‐term memory functions are integrated within the same device, enabling its use as artificial neurons for the reservoir unit and synapses in the readout layer to build up a reservoir computing (RC) system. The performance of the dynamic neuron and synaptic weight update are benchmarked with classification tasks on hand‐written digit images, respectively, both attaining accuracies above 90%. Furthermore, by modulating the device as both reservoir mode and synaptic mode, a full‐OECT RC system capable of distinguishing electromyography signals of hand gestures is demonstrated. These results highlight the potential of simplified, homogeneous integration of dual‐modal OECTs to form brain‐like computing hardware systems for efficient biological signal processing across a broad range of applications.https://doi.org/10.1002/smsc.202400415long‐term memoryneuromorphic transistorsorganic electrochemical transistorsreservoir computingshort‐term memory
spellingShingle Yuyang Yin
Shaocong Wang
Ruihong Weng
Na Xiao
Jianni Deng
Qian Wang
Zhongrui Wang
Paddy Kwok Leung Chan
A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing
Small Science
long‐term memory
neuromorphic transistors
organic electrochemical transistors
reservoir computing
short‐term memory
title A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing
title_full A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing
title_fullStr A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing
title_full_unstemmed A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing
title_short A Dual‐Modal Memory Organic Electrochemical Transistor Implementation for Reservoir Computing
title_sort dual modal memory organic electrochemical transistor implementation for reservoir computing
topic long‐term memory
neuromorphic transistors
organic electrochemical transistors
reservoir computing
short‐term memory
url https://doi.org/10.1002/smsc.202400415
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