Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area

Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area

Based on the “U” shape enhanced double diffused metal oxide semiconductor (DMOS+) planar gate cell structure, enhanced controllable punch through (CPT+) and junction termination extension structure, a strong turn-off current capability and wide short circuit safe operation area 4 500 V IGBT chip was...

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Bibliographic Details
Main Authors: ZHANG Dahua, MA Liang, ZHANG Zhonghua, TAN Canjian, LIU Guoyou
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2017-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
“U” shape DMOS+
CPT+
low on-state loss
strong turn-off capacity
wide short circuit safe operation area
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.010
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Summary:Based on the “U” shape enhanced double diffused metal oxide semiconductor (DMOS+) planar gate cell structure, enhanced controllable punch through (CPT+) and junction termination extension structure, a strong turn-off current capability and wide short circuit safe operation area 4 500 V IGBT chip was developed with optimizing the carrier stored layer, the buffer layer and the collector structure, low on-state loss. The test results at Tj=125 ℃ show that the forward voltage drop Vceon is 3 V, the turn off capability is 6.75 times rated current and the SCSOA can withstand Vgeon=21.5 V, tsc=15 μs test condition. Moreover, the maximum operation junction temperature Tj is 150 ℃ .
ISSN:2096-5427

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