One-step solution processing of printable Sb2S3 nano-rods for high-performance photoconductors
Achieving large-scale, affordable, and highly dependable production of antimony sulfide is crucial for unlocking its potential in various applications, including photoconductors, solid-state batteries, thermoelectrics, and solar cells. In our study, we introduce a straightforward, economical, and ca...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ad86aa |
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| Summary: | Achieving large-scale, affordable, and highly dependable production of antimony sulfide is crucial for unlocking its potential in various applications, including photoconductors, solid-state batteries, thermoelectrics, and solar cells. In our study, we introduce a straightforward, economical, and catalyst-free single-step solution process for fabricating one-dimensional Sb _2 S _3 nanostructures on flexible polyimide substrates, and we explore their use as photoconductors in the ultraviolet (UV) and visible light spectrum. The precursor solution for creating the Sb _2 S _3 films is prepared by dissolving specified quantities of elemental Sb and S in a solution mixture of ethylenediamine and 2-mercaptoethanol. This solution is then spin-coated onto a polyimide substrate and subsequently annealed at 300 °C for several minutes. Utilizing field emission scanning electron microscopy, grazing incidence x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we demonstrate that the Sb _2 S _3 films possess high crystallinity, uniform morphology, and a composition that is nearly stoichiometric. Additionally, through Tauc plot analysis, we determine that the films exhibit a direct bandgap of approximately 1.67 eV, which is in close agreement with the bandgap predicted by Heyd–Scuseria–Ernzerhof (HSE06) density-functional theory simulations. The metal-semiconductor–metal photoconductors fabricated with these films display a significant photoresponse to both UV and visible light. These devices achieve a UV on/off ratio of up to 160 at a light intensity of 30 mW cm ^−2 , with brief rise and fall times of 44 ms and 28 ms, respectively. |
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| ISSN: | 2053-1591 |