Light‐Induced Radix Modulation and Optoelectronic Synaptic Properties in Ternary‐Logic Devices

Multivalued logic (MVL) devices overcome the limitations of binary computing. However, their complex structures and complementary metal–oxide semiconductor (CMOS) incompatibility pose considerable challenges. Herein, a streamlined MVL device has been developed using a transistor with an oxide channe...

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Bibliographic Details
Main Authors: Chohyeon Park, Jung Wook Lim
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Small Structures
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Online Access:https://doi.org/10.1002/sstr.202400530
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Summary:Multivalued logic (MVL) devices overcome the limitations of binary computing. However, their complex structures and complementary metal–oxide semiconductor (CMOS) incompatibility pose considerable challenges. Herein, a streamlined MVL device has been developed using a transistor with an oxide channel and dual‐gate dielectric, eliminating the need for a barrier junction in the channel layer. This new device supports three logic states (OFF, intermediate, and ON) through Fowler–Nordheim tunneling between the gate and source. It exhibits optoelectronic synaptic properties by leveraging the photoresponse of its constituent TiO2 channel and charge trapping at the gate dielectric/channel interface, achieving optical potentiation of 128 multistates with a linearity of 0.94. Additionally, the device can switch between ternary and binary‐logic states within a specific wavelength range. The proposed approach is a practical solution to integrating logic state switching and synaptic functions in a single device, with potential application in advanced semiconductor technologies.
ISSN:2688-4062