Simulation of CIGS Thin Film Solar Cells Using AMPS-1D
The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectro...
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_747-754.pdf |
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| author | J.R. Ray C.J. Panchal M.S. Desai U.B. Trivedi |
| author_facet | J.R. Ray C.J. Panchal M.S. Desai U.B. Trivedi |
| author_sort | J.R. Ray |
| collection | DOAJ |
| description | The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE). |
| format | Article |
| id | doaj-art-884d7ea9bcbd4b4fa6d985434d63c3fb |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-884d7ea9bcbd4b4fa6d985434d63c3fb2025-08-20T03:37:38ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131747754Simulation of CIGS Thin Film Solar Cells Using AMPS-1DJ.R. RayC.J. PanchalM.S. DesaiU.B. TrivediThe solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE).http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_747-754.pdfCIGS thin filmAMPS-1D simulationConversion efficiencyQuantum efficiency |
| spellingShingle | J.R. Ray C.J. Panchal M.S. Desai U.B. Trivedi Simulation of CIGS Thin Film Solar Cells Using AMPS-1D Журнал нано- та електронної фізики CIGS thin film AMPS-1D simulation Conversion efficiency Quantum efficiency |
| title | Simulation of CIGS Thin Film Solar Cells Using AMPS-1D |
| title_full | Simulation of CIGS Thin Film Solar Cells Using AMPS-1D |
| title_fullStr | Simulation of CIGS Thin Film Solar Cells Using AMPS-1D |
| title_full_unstemmed | Simulation of CIGS Thin Film Solar Cells Using AMPS-1D |
| title_short | Simulation of CIGS Thin Film Solar Cells Using AMPS-1D |
| title_sort | simulation of cigs thin film solar cells using amps 1d |
| topic | CIGS thin film AMPS-1D simulation Conversion efficiency Quantum efficiency |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_747-754.pdf |
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