Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films
Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring hetero...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/12/1436 |
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| Summary: | Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface. The obtained NCD/Ti/Cu composite layer shows uniform island-like Cu nanostructures with 100~200 nm diameters, which could promote bonding between NCD and Si chips. Ultimately, a heterogeneous interface preparation of Si/Ag/Cu/Ti/NCD was achieved, with the integration temperature not exceeding 250 °C. The TEM analysis shows the closely packed atomic interface of the Cu NPs and deposited Ti/Cu layers, revealing the bonding mechanism. |
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| ISSN: | 2072-666X |