Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy
Abstract The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growt...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Advanced Physics Research |
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| Online Access: | https://doi.org/10.1002/apxr.202400126 |
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| author | A. Gilbert K. Graser M. Ramonda A. Trampert J.‐B. Rodriguez E. Tournié |
| author_facet | A. Gilbert K. Graser M. Ramonda A. Trampert J.‐B. Rodriguez E. Tournié |
| author_sort | A. Gilbert |
| collection | DOAJ |
| description | Abstract The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growth. In this study, the efficiency of a structure, combining III‐Sb‐based insertion layers and thermal annealing is evaluated, on the reduction of the emerging TDD in GaSb buffer layers grown on Si(001) substrates by molecular beam epitaxy. the impact of the thickness, composition, and number of the insertion layers is extensively explored. Then a detailed study of the annealing cycles with different conditions is conducted. A record TDD in the low 107 cm−2 for a 2.25 µm GaSb buffer grown on Si(001) is ultimately demonstrated. |
| format | Article |
| id | doaj-art-87eb3db4776f4069b1db894d60fe405f |
| institution | DOAJ |
| issn | 2751-1200 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj-art-87eb3db4776f4069b1db894d60fe405f2025-08-20T03:09:09ZengWiley-VCHAdvanced Physics Research2751-12002025-04-0144n/an/a10.1002/apxr.202400126Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam EpitaxyA. Gilbert0K. Graser1M. Ramonda2A. Trampert3J.‐B. Rodriguez4E. Tournié5University of Montpellier IES, CNRS Montpellier F‐34000 FrancePaul‐Drude‐Institut für Festkörperphysik Leibniz‐Institut im Forschungsverbund Berlin e.V. D‐10117 Berlin GermanyCTM University of Montpellier Montpellier F‐34000 FrancePaul‐Drude‐Institut für Festkörperphysik Leibniz‐Institut im Forschungsverbund Berlin e.V. D‐10117 Berlin GermanyUniversity of Montpellier IES, CNRS Montpellier F‐34000 FranceUniversity of Montpellier IES, CNRS Montpellier F‐34000 FranceAbstract The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growth. In this study, the efficiency of a structure, combining III‐Sb‐based insertion layers and thermal annealing is evaluated, on the reduction of the emerging TDD in GaSb buffer layers grown on Si(001) substrates by molecular beam epitaxy. the impact of the thickness, composition, and number of the insertion layers is extensively explored. Then a detailed study of the annealing cycles with different conditions is conducted. A record TDD in the low 107 cm−2 for a 2.25 µm GaSb buffer grown on Si(001) is ultimately demonstrated.https://doi.org/10.1002/apxr.202400126defect reduction layerheteroepitaxyinterfacial misfit networksiliconthreading dislocations |
| spellingShingle | A. Gilbert K. Graser M. Ramonda A. Trampert J.‐B. Rodriguez E. Tournié Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy Advanced Physics Research defect reduction layer heteroepitaxy interfacial misfit network silicon threading dislocations |
| title | Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy |
| title_full | Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy |
| title_fullStr | Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy |
| title_full_unstemmed | Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy |
| title_short | Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy |
| title_sort | reduction of the threading dislocation density in gasb layers grown on si 001 by molecular beam epitaxy |
| topic | defect reduction layer heteroepitaxy interfacial misfit network silicon threading dislocations |
| url | https://doi.org/10.1002/apxr.202400126 |
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