Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs
Abstract Series connection of Silicon Carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) is an interesting solution to design switches for voltages that are not yet commercially available or limited for single‐die devices. However, inherent static and dynamic voltage balancin...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-11-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12744 |
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