A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics
To investigate the performance degradation of a vertical-cavity surface-emitting laser (VCSEL) caused by self-heating effects, a 940 nm VCSEL with a buried tunnel junction (BTJ) and an aperture size of 10 μm was designed. The BTJ-type VCSEL achieves a 39.38% higher peak power (19.96 mW), a 3.26% hig...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0267467 |
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| author | Linjin Song Zhigang Jia Wei Jia Shufang Ma Lin Shang Hailiang Dong |
| author_facet | Linjin Song Zhigang Jia Wei Jia Shufang Ma Lin Shang Hailiang Dong |
| author_sort | Linjin Song |
| collection | DOAJ |
| description | To investigate the performance degradation of a vertical-cavity surface-emitting laser (VCSEL) caused by self-heating effects, a 940 nm VCSEL with a buried tunnel junction (BTJ) and an aperture size of 10 μm was designed. The BTJ-type VCSEL achieves a 39.38% higher peak power (19.96 mW), a 3.26% higher peak power conversion efficiency (46.41%), and a 24.97% lower differential resistance (37.32 Ω), and the thermal rollover current is delayed to 6.07 mA than conventional design. When the injection current is 20 mA, the BTJ-type VCSEL exhibits a low temperature and Auger recombination rate, while the stimulated recombination rate is high. In addition, the BTJ-type VCSEL shows a small far-field divergence angle and good beam quality. Therefore, the designed BTJ-type VCSEL offers valuable guidance for the preparation of high-reliability and long-lifetime VCSEL. |
| format | Article |
| id | doaj-art-87bcbcdeaea1420694a67da35fb0ed9a |
| institution | OA Journals |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-87bcbcdeaea1420694a67da35fb0ed9a2025-08-20T02:10:06ZengAIP Publishing LLCAIP Advances2158-32262025-05-01155055231055231-810.1063/5.0267467A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristicsLinjin Song0Zhigang Jia1Wei Jia2Shufang Ma3Lin Shang4Hailiang Dong5Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, ChinaXi’an Key Laboratory of Compound Semiconductor Materials and Devices, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi’an 710021, People’s Republic of ChinaXi’an Key Laboratory of Compound Semiconductor Materials and Devices, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi’an 710021, People’s Republic of ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, ChinaTo investigate the performance degradation of a vertical-cavity surface-emitting laser (VCSEL) caused by self-heating effects, a 940 nm VCSEL with a buried tunnel junction (BTJ) and an aperture size of 10 μm was designed. The BTJ-type VCSEL achieves a 39.38% higher peak power (19.96 mW), a 3.26% higher peak power conversion efficiency (46.41%), and a 24.97% lower differential resistance (37.32 Ω), and the thermal rollover current is delayed to 6.07 mA than conventional design. When the injection current is 20 mA, the BTJ-type VCSEL exhibits a low temperature and Auger recombination rate, while the stimulated recombination rate is high. In addition, the BTJ-type VCSEL shows a small far-field divergence angle and good beam quality. Therefore, the designed BTJ-type VCSEL offers valuable guidance for the preparation of high-reliability and long-lifetime VCSEL.http://dx.doi.org/10.1063/5.0267467 |
| spellingShingle | Linjin Song Zhigang Jia Wei Jia Shufang Ma Lin Shang Hailiang Dong A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics AIP Advances |
| title | A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics |
| title_full | A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics |
| title_fullStr | A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics |
| title_full_unstemmed | A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics |
| title_short | A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics |
| title_sort | buried tunnel junction 940 nm vcsel for achieving thermal diffusion characteristics |
| url | http://dx.doi.org/10.1063/5.0267467 |
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