Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics
This study optimizes the CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes (HJDs) by tailoring the structural parameters of CuO<sub>x</sub> layers. The hole concentration in the sputtered CuO<sub>x</sub> was precisely contro...
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| Language: | English |
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MDPI AG
2025-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/2/87 |
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| author | Xiaohui Wang Mujun Li Minghao He Honghao Lu Chun-Zhang Chen Yang Jiang Kangyao Wen Fangzhou Du Yi Zhang Chenkai Deng Zilong Xiong Haozhe Yu Qing Wang Hongyu Yu |
| author_facet | Xiaohui Wang Mujun Li Minghao He Honghao Lu Chun-Zhang Chen Yang Jiang Kangyao Wen Fangzhou Du Yi Zhang Chenkai Deng Zilong Xiong Haozhe Yu Qing Wang Hongyu Yu |
| author_sort | Xiaohui Wang |
| collection | DOAJ |
| description | This study optimizes the CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes (HJDs) by tailoring the structural parameters of CuO<sub>x</sub> layers. The hole concentration in the sputtered CuO<sub>x</sub> was precisely controlled by adjusting the Ar/O<sub>2</sub> gas ratio. Experimental investigations and TCAD simulations were employed to systematically evaluate the impact of the CuO<sub>x</sub> layer dimension and hole concentration on the electrical performance of HJDs. The results indicate that increasing the diameter dimension of the CuO<sub>x</sub> layer or tuning the hole concentration to optimal values significantly enhances the breakdown voltage (V<sub>B</sub>) of single-layer HJDs by mitigating the electric field crowing effects. Additionally, a double-layer CuO<sub>x</sub> structure (p<sup>+</sup> CuO<sub>x</sub>/p<sup>−</sup> CuO<sub>x</sub>) was designed and optimized to achieve an ideal balance between the V<sub>B</sub> and specific on-resistance (R<sub>on,sp</sub>). This double-layer HJD demonstrated a high V<sub>B</sub> of 2780 V and a low R<sub>on,sp</sub> of 6.46 mΩ·cm<sup>2</sup>, further yielding a power figure of merit of 1.2 GW/cm<sup>2</sup>. These findings present a promising strategy for advancing the performance of Ga<sub>2</sub>O<sub>3</sub> devices in power electronics applications. |
| format | Article |
| id | doaj-art-876fe2ee5b884463a6ea7a5ef7ac2a05 |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-876fe2ee5b884463a6ea7a5ef7ac2a052025-01-24T13:44:05ZengMDPI AGNanomaterials2079-49912025-01-011528710.3390/nano15020087Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power ElectronicsXiaohui Wang0Mujun Li1Minghao He2Honghao Lu3Chun-Zhang Chen4Yang Jiang5Kangyao Wen6Fangzhou Du7Yi Zhang8Chenkai Deng9Zilong Xiong10Haozhe Yu11Qing Wang12Hongyu Yu13School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaPeng Cheng Laboratory, Shenzhen 518000, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaThis study optimizes the CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes (HJDs) by tailoring the structural parameters of CuO<sub>x</sub> layers. The hole concentration in the sputtered CuO<sub>x</sub> was precisely controlled by adjusting the Ar/O<sub>2</sub> gas ratio. Experimental investigations and TCAD simulations were employed to systematically evaluate the impact of the CuO<sub>x</sub> layer dimension and hole concentration on the electrical performance of HJDs. The results indicate that increasing the diameter dimension of the CuO<sub>x</sub> layer or tuning the hole concentration to optimal values significantly enhances the breakdown voltage (V<sub>B</sub>) of single-layer HJDs by mitigating the electric field crowing effects. Additionally, a double-layer CuO<sub>x</sub> structure (p<sup>+</sup> CuO<sub>x</sub>/p<sup>−</sup> CuO<sub>x</sub>) was designed and optimized to achieve an ideal balance between the V<sub>B</sub> and specific on-resistance (R<sub>on,sp</sub>). This double-layer HJD demonstrated a high V<sub>B</sub> of 2780 V and a low R<sub>on,sp</sub> of 6.46 mΩ·cm<sup>2</sup>, further yielding a power figure of merit of 1.2 GW/cm<sup>2</sup>. These findings present a promising strategy for advancing the performance of Ga<sub>2</sub>O<sub>3</sub> devices in power electronics applications.https://www.mdpi.com/2079-4991/15/2/87power electronicsβ-Ga<sub>2</sub>O<sub>3</sub>heterojunction diodesCu<sub>2</sub>Ooptimization |
| spellingShingle | Xiaohui Wang Mujun Li Minghao He Honghao Lu Chun-Zhang Chen Yang Jiang Kangyao Wen Fangzhou Du Yi Zhang Chenkai Deng Zilong Xiong Haozhe Yu Qing Wang Hongyu Yu Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics Nanomaterials power electronics β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes Cu<sub>2</sub>O optimization |
| title | Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics |
| title_full | Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics |
| title_fullStr | Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics |
| title_full_unstemmed | Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics |
| title_short | Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics |
| title_sort | optimization of cuo sub x sub ga sub 2 sub o sub 3 sub heterojunction diodes for high voltage power electronics |
| topic | power electronics β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes Cu<sub>2</sub>O optimization |
| url | https://www.mdpi.com/2079-4991/15/2/87 |
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