High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design
We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode oper...
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MDPI AG
2024-12-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/15/1/41 |
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| _version_ | 1841549454810808320 |
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| author | Juntian Cao Chengao Yang Yihang Chen Hongguang Yu Jianmei Shi Haoran Wen Zhengqi Geng Zhiyuan Wang Hao Tan Yu Zhang Donghai Wu Yingqiang Xu Haiqiao Ni Zhichuan Niu |
| author_facet | Juntian Cao Chengao Yang Yihang Chen Hongguang Yu Jianmei Shi Haoran Wen Zhengqi Geng Zhiyuan Wang Hao Tan Yu Zhang Donghai Wu Yingqiang Xu Haiqiao Ni Zhichuan Niu |
| author_sort | Juntian Cao |
| collection | DOAJ |
| description | We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode operation with a large injecting current range of 800 mA from 15 °C to 40 °C. The maximum side-mode suppression ratio (SMSR) is up to 42 dB. To increase the output power, an on-chip integrated master oscillator power amplifier (MOPA) is also introduced. MOPA-DBR lasers with different matching configurations between the gain peak and Bragg wavelength are fabricated, resulting in various amplification consequences. The best device is realized with 40 nm red-shifted between Bragg wavelength and photoluminescence (PL) peak. A power amplification of 5.6 times is achieved with the maximum output power of 45 mW. Thus, we put up the feasibility and key design parameters of on-chip integrated power amplification DBR lasers towards mid-infrared. |
| format | Article |
| id | doaj-art-86d852da28f64daa94d3bdd7ddd20f4d |
| institution | Kabale University |
| issn | 2076-3417 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj-art-86d852da28f64daa94d3bdd7ddd20f4d2025-01-10T13:14:14ZengMDPI AGApplied Sciences2076-34172024-12-011514110.3390/app15010041High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match DesignJuntian Cao0Chengao Yang1Yihang Chen2Hongguang Yu3Jianmei Shi4Haoran Wen5Zhengqi Geng6Zhiyuan Wang7Hao Tan8Yu Zhang9Donghai Wu10Yingqiang Xu11Haiqiao Ni12Zhichuan Niu13Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInternational Quantum Academy, Shenzhen 518048, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWe reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode operation with a large injecting current range of 800 mA from 15 °C to 40 °C. The maximum side-mode suppression ratio (SMSR) is up to 42 dB. To increase the output power, an on-chip integrated master oscillator power amplifier (MOPA) is also introduced. MOPA-DBR lasers with different matching configurations between the gain peak and Bragg wavelength are fabricated, resulting in various amplification consequences. The best device is realized with 40 nm red-shifted between Bragg wavelength and photoluminescence (PL) peak. A power amplification of 5.6 times is achieved with the maximum output power of 45 mW. Thus, we put up the feasibility and key design parameters of on-chip integrated power amplification DBR lasers towards mid-infrared.https://www.mdpi.com/2076-3417/15/1/41GaSb-based diode laserssingle-longitudinal modedistributed Bragg reflectorpower amplifier |
| spellingShingle | Juntian Cao Chengao Yang Yihang Chen Hongguang Yu Jianmei Shi Haoran Wen Zhengqi Geng Zhiyuan Wang Hao Tan Yu Zhang Donghai Wu Yingqiang Xu Haiqiao Ni Zhichuan Niu High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design Applied Sciences GaSb-based diode lasers single-longitudinal mode distributed Bragg reflector power amplifier |
| title | High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design |
| title_full | High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design |
| title_fullStr | High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design |
| title_full_unstemmed | High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design |
| title_short | High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design |
| title_sort | high performance gasb based dbr laser with on chip integrated power amplifier via gain match design |
| topic | GaSb-based diode lasers single-longitudinal mode distributed Bragg reflector power amplifier |
| url | https://www.mdpi.com/2076-3417/15/1/41 |
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