Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors
This study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage (<i>V</i><sub>T</sub>) of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying co...
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MDPI AG
2024-12-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/1/27 |
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| author | Snežana Djorić-Veljković Emilija Živanović Vojkan Davidović Sandra Veljković Nikola Mitrović Goran Ristić Albena Paskaleva Dencho Spassov Danijel Danković |
| author_facet | Snežana Djorić-Veljković Emilija Živanović Vojkan Davidović Sandra Veljković Nikola Mitrović Goran Ristić Albena Paskaleva Dencho Spassov Danijel Danković |
| author_sort | Snežana Djorić-Veljković |
| collection | DOAJ |
| description | This study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage (<i>V</i><sub>T</sub>) of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying conditions. Shifts in <i>V</i><sub>T</sub> (Δ<i>V</i><sub>T</sub>) were analyzed under different stress orders, showing distinct influence mechanisms, including defects creation and their removal and electrochemical reactions. Recovery data after each type of stress indicated ongoing electrochemical processes, influencing subsequent stress responses. Although the Δ<i>V</i><sub>T</sub> is not particularly pronounced during the recovery after irradiation, changes in subthreshold characteristics indicate the changes in defect densities that affect the behavior of the components during further application. Additionally, the findings show that the Δ<i>V</i><sub>T</sub> during the NBT stress after irradiation (up to certain doses and conditions) remains relatively stable, but this is the result of a balance of competing mechanisms. A subthreshold characteristic analysis provided a further insight into the degradation dynamics. A particular attention was paid to analyzing Δ<i>V</i><sub>T</sub> with a focus on predicting the lifetime. In practical applications, especially under pulsed operation, prior stresses altered the device’s thermal and electrical performance. It was shown that self-heating effects were more pronounced in pre-stressed components, increasing the power dissipation and thermal instability. These insights additionally highlight the importance of understanding stress-induced degradation and recovery mechanisms for optimizing VDMOS transistor reliability in advanced electronic systems. |
| format | Article |
| id | doaj-art-865cdab54afd42af8b281436298b3194 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-865cdab54afd42af8b281436298b31942025-01-24T13:41:53ZengMDPI AGMicromachines2072-666X2024-12-011612710.3390/mi16010027Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS TransistorsSnežana Djorić-Veljković0Emilija Živanović1Vojkan Davidović2Sandra Veljković3Nikola Mitrović4Goran Ristić5Albena Paskaleva6Dencho Spassov7Danijel Danković8Faculty of Civil Engineering and Architecture, University of Niš, Aleksandra Medvedeva 14, 18104 Niš, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, SerbiaInstitute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, BulgariaInstitute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, BulgariaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, SerbiaThis study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage (<i>V</i><sub>T</sub>) of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying conditions. Shifts in <i>V</i><sub>T</sub> (Δ<i>V</i><sub>T</sub>) were analyzed under different stress orders, showing distinct influence mechanisms, including defects creation and their removal and electrochemical reactions. Recovery data after each type of stress indicated ongoing electrochemical processes, influencing subsequent stress responses. Although the Δ<i>V</i><sub>T</sub> is not particularly pronounced during the recovery after irradiation, changes in subthreshold characteristics indicate the changes in defect densities that affect the behavior of the components during further application. Additionally, the findings show that the Δ<i>V</i><sub>T</sub> during the NBT stress after irradiation (up to certain doses and conditions) remains relatively stable, but this is the result of a balance of competing mechanisms. A subthreshold characteristic analysis provided a further insight into the degradation dynamics. A particular attention was paid to analyzing Δ<i>V</i><sub>T</sub> with a focus on predicting the lifetime. In practical applications, especially under pulsed operation, prior stresses altered the device’s thermal and electrical performance. It was shown that self-heating effects were more pronounced in pre-stressed components, increasing the power dissipation and thermal instability. These insights additionally highlight the importance of understanding stress-induced degradation and recovery mechanisms for optimizing VDMOS transistor reliability in advanced electronic systems.https://www.mdpi.com/2072-666X/16/1/27VDMOSrecoveryreliabilityirradiationNBTI stressself-heating |
| spellingShingle | Snežana Djorić-Veljković Emilija Živanović Vojkan Davidović Sandra Veljković Nikola Mitrović Goran Ristić Albena Paskaleva Dencho Spassov Danijel Danković Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors Micromachines VDMOS recovery reliability irradiation NBTI stress self-heating |
| title | Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors |
| title_full | Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors |
| title_fullStr | Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors |
| title_full_unstemmed | Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors |
| title_short | Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors |
| title_sort | recovery analysis of sequentially irradiated and nbt stressed vdmos transistors |
| topic | VDMOS recovery reliability irradiation NBTI stress self-heating |
| url | https://www.mdpi.com/2072-666X/16/1/27 |
| work_keys_str_mv | AT snezanadjoricveljkovic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT emilijazivanovic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT vojkandavidovic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT sandraveljkovic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT nikolamitrovic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT goranristic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT albenapaskaleva recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT denchospassov recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors AT danijeldankovic recoveryanalysisofsequentiallyirradiatedandnbtstressedvdmostransistors |