Method for forming a titanium-germanium contact layer for thermostabilization of transistors
Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Dagestan State Technical University
2021-01-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
| Subjects: | |
| Online Access: | https://vestnik.dgtu.ru/jour/article/view/876 |
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