A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET
Abstract In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of...
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| Format: | Article |
| Language: | English |
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Springer
2024-12-01
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| Series: | Discover Applied Sciences |
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| Online Access: | https://doi.org/10.1007/s42452-024-06225-1 |
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| author | Neeraj Gupta Rashmi Gupta Rekha Yadav Prashant Kumar Lalit Rai |
| author_facet | Neeraj Gupta Rashmi Gupta Rekha Yadav Prashant Kumar Lalit Rai |
| author_sort | Neeraj Gupta |
| collection | DOAJ |
| description | Abstract In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of temperature on the drain current, threshold voltage and subthreshold swing has been investigated. The performance of GAA MOSFET and TM-DP-GAA MOSFET has been compared for 30 nm channel length. The TM-DP-GAA MOSFET exhibits lower subthreshold swing, higher transconductance, high drain current and reduced leakage current in comparison to the other semiconductor devices. It has also been noticed that with increasing temperature, the variation in subthreshold current and subthreshold swing is minimal. The subthreshold swing improves by 12.42% over the DPGAA MOSFET. The dielectric pocket-based MOSFET is more resistant to temperature variation.The device simulation is performed using Silvaco TCAD. |
| format | Article |
| id | doaj-art-860fdff4225d4e95a6ff59d6ca206441 |
| institution | OA Journals |
| issn | 3004-9261 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Applied Sciences |
| spelling | doaj-art-860fdff4225d4e95a6ff59d6ca2064412025-08-20T02:31:00ZengSpringerDiscover Applied Sciences3004-92612024-12-0161211110.1007/s42452-024-06225-1A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFETNeeraj Gupta0Rashmi Gupta1Rekha Yadav2Prashant Kumar3Lalit Rai4Department of Electronics & Communication Engineering, Amity University HaryanaDepartment of Electronics & Communication Engineering, Amity University HaryanaDepartment of Electronics & Communication Engineering, Deenbandhu Chhotu Ram University of Science & TechnologyDepartment of Electronics & Communication Engineering, J.C. Bose University of Science & Technology, YMCADepartment of Electronics & Communication Engineering, J.C. Bose University of Science & Technology, YMCAAbstract In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of temperature on the drain current, threshold voltage and subthreshold swing has been investigated. The performance of GAA MOSFET and TM-DP-GAA MOSFET has been compared for 30 nm channel length. The TM-DP-GAA MOSFET exhibits lower subthreshold swing, higher transconductance, high drain current and reduced leakage current in comparison to the other semiconductor devices. It has also been noticed that with increasing temperature, the variation in subthreshold current and subthreshold swing is minimal. The subthreshold swing improves by 12.42% over the DPGAA MOSFET. The dielectric pocket-based MOSFET is more resistant to temperature variation.The device simulation is performed using Silvaco TCAD.https://doi.org/10.1007/s42452-024-06225-1Dielectric pocketTriple materialTemperatureSubthresholdGAA-MOSFETTransconductance |
| spellingShingle | Neeraj Gupta Rashmi Gupta Rekha Yadav Prashant Kumar Lalit Rai A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET Discover Applied Sciences Dielectric pocket Triple material Temperature Subthreshold GAA-MOSFET Transconductance |
| title | A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET |
| title_full | A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET |
| title_fullStr | A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET |
| title_full_unstemmed | A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET |
| title_short | A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET |
| title_sort | temperature dependent analytical model performance evaluation of triple material dielectric pocket gate all around mosfet |
| topic | Dielectric pocket Triple material Temperature Subthreshold GAA-MOSFET Transconductance |
| url | https://doi.org/10.1007/s42452-024-06225-1 |
| work_keys_str_mv | AT neerajgupta atemperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT rashmigupta atemperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT rekhayadav atemperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT prashantkumar atemperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT lalitrai atemperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT neerajgupta temperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT rashmigupta temperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT rekhayadav temperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT prashantkumar temperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet AT lalitrai temperaturedependentanalyticalmodelperformanceevaluationoftriplematerialdielectricpocketgateallaroundmosfet |