Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process
In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing thr...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
|
| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2018/8527491 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850214375522041856 |
|---|---|
| author | Grace Rajan Krishna Aryal Shankar Karki Puruswottam Aryal Robert W. Collins Sylvain Marsillac |
| author_facet | Grace Rajan Krishna Aryal Shankar Karki Puruswottam Aryal Robert W. Collins Sylvain Marsillac |
| author_sort | Grace Rajan |
| collection | DOAJ |
| description | In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density. |
| format | Article |
| id | doaj-art-85d9b1d6923841cd936be8e1ef1bbb6c |
| institution | OA Journals |
| issn | 2314-4920 2314-4939 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Spectroscopy |
| spelling | doaj-art-85d9b1d6923841cd936be8e1ef1bbb6c2025-08-20T02:08:56ZengWileyJournal of Spectroscopy2314-49202314-49392018-01-01201810.1155/2018/85274918527491Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage ProcessGrace Rajan0Krishna Aryal1Shankar Karki2Puruswottam Aryal3Robert W. Collins4Sylvain Marsillac5Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USADepartment of Physics & Astronomy, University of Toledo, Toledo, OH 43606, USADepartment of Physics & Astronomy, University of Toledo, Toledo, OH 43606, USAVirginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USAIn view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.http://dx.doi.org/10.1155/2018/8527491 |
| spellingShingle | Grace Rajan Krishna Aryal Shankar Karki Puruswottam Aryal Robert W. Collins Sylvain Marsillac Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process Journal of Spectroscopy |
| title | Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process |
| title_full | Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process |
| title_fullStr | Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process |
| title_full_unstemmed | Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process |
| title_short | Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process |
| title_sort | characterization and analysis of ultrathin cigs films and solar cells deposited by 3 stage process |
| url | http://dx.doi.org/10.1155/2018/8527491 |
| work_keys_str_mv | AT gracerajan characterizationandanalysisofultrathincigsfilmsandsolarcellsdepositedby3stageprocess AT krishnaaryal characterizationandanalysisofultrathincigsfilmsandsolarcellsdepositedby3stageprocess AT shankarkarki characterizationandanalysisofultrathincigsfilmsandsolarcellsdepositedby3stageprocess AT puruswottamaryal characterizationandanalysisofultrathincigsfilmsandsolarcellsdepositedby3stageprocess AT robertwcollins characterizationandanalysisofultrathincigsfilmsandsolarcellsdepositedby3stageprocess AT sylvainmarsillac characterizationandanalysisofultrathincigsfilmsandsolarcellsdepositedby3stageprocess |