On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing
We investigate the continuous annealing of orthorhombic κ-Ga2O3 films on AlN/c-plane sapphire templates grown by Mist Chemical Vapor Deposition (mist-CVD) using in situ high-temperature x-ray diffraction (HT-XRD). Increasing the annealing temperature from 400 to 1100 °C in both vacuum and ambient ai...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0233281 |
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