A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates
Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering t...
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| Format: | Article |
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AIP Publishing LLC
2025-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0229850 |
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| author | C. A. Pennington M. Gaowei E. M. Echeverria K. Evans-Lutterodt A. Galdi T. Juffmann S. Karkare J. Maxson S. J. van der Molen P. Saha J. Smedley W. G. Stam R. M. Tromp |
| author_facet | C. A. Pennington M. Gaowei E. M. Echeverria K. Evans-Lutterodt A. Galdi T. Juffmann S. Karkare J. Maxson S. J. van der Molen P. Saha J. Smedley W. G. Stam R. M. Tromp |
| author_sort | C. A. Pennington |
| collection | DOAJ |
| description | Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electron beams by reducing surface disorder and enabling the engineering of material properties at the level of atomic layers. In this report, we demonstrate the growth of ordered Cs3Sb films on single crystal substrates 3C-SiC and graphene-coated 4H-SiC using pulsed laser deposition and conventional thermal evaporation growth techniques. The crystalline structures of the Cs3Sb films were examined using reflection high energy electron diffraction and x-ray diffraction diagnostics, while film thickness and roughness estimates were made using x-ray reflectivity. With these tools, we observed ordered domains in less than 10 nm thick films with quantum efficiencies greater than 1% at 530 nm. Moreover, we identify structural features such as Laue oscillations indicative of highly ordered films. We found that Cs3Sb films grew with flat, fiber-textured surfaces on 3C-SiC and with multiple ordered domains and sub-nanometer surface roughness on graphene-coated 4H-SiC under our growth conditions. We identify the crystallographic orientations of Cs3Sb grown on graphene-coated 4H-SiC substrates and discuss the significance of examining the crystal structure of these films for growing epitaxial heterostructures in future experiments. |
| format | Article |
| id | doaj-art-84d59d6660dd4520827121ddd1fc527b |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-84d59d6660dd4520827121ddd1fc527b2025-02-03T16:42:31ZengAIP Publishing LLCAPL Materials2166-532X2025-01-01131011120011120-910.1063/5.0229850A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substratesC. A. Pennington0M. Gaowei1E. M. Echeverria2K. Evans-Lutterodt3A. Galdi4T. Juffmann5S. Karkare6J. Maxson7S. J. van der Molen8P. Saha9J. Smedley10W. G. Stam11R. M. Tromp12Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York 14850, USABrookhaven National Laboratory, Upton, New York 11973-5000, USACornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York 14850, USABrookhaven National Laboratory, Upton, New York 11973-5000, USADepartment of Industrial Engineering, University of Salerno, 84084 Fisciano (SA), ItalyFaculty of Physics, University of Vienna, VCQ, A-1090 Vienna, AustriaArizona State University, Tempe, Arizona 85287, USACornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York 14850, USALeiden Institute of Physics, Niels Bohrweg 2, Leiden, The NetherlandsBrookhaven National Laboratory, Upton, New York 11973-5000, USASLAC National Accelerator Laboratory, Menlo Park, California 94025, USALeiden Institute of Physics, Niels Bohrweg 2, Leiden, The NetherlandsIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAAlkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electron beams by reducing surface disorder and enabling the engineering of material properties at the level of atomic layers. In this report, we demonstrate the growth of ordered Cs3Sb films on single crystal substrates 3C-SiC and graphene-coated 4H-SiC using pulsed laser deposition and conventional thermal evaporation growth techniques. The crystalline structures of the Cs3Sb films were examined using reflection high energy electron diffraction and x-ray diffraction diagnostics, while film thickness and roughness estimates were made using x-ray reflectivity. With these tools, we observed ordered domains in less than 10 nm thick films with quantum efficiencies greater than 1% at 530 nm. Moreover, we identify structural features such as Laue oscillations indicative of highly ordered films. We found that Cs3Sb films grew with flat, fiber-textured surfaces on 3C-SiC and with multiple ordered domains and sub-nanometer surface roughness on graphene-coated 4H-SiC under our growth conditions. We identify the crystallographic orientations of Cs3Sb grown on graphene-coated 4H-SiC substrates and discuss the significance of examining the crystal structure of these films for growing epitaxial heterostructures in future experiments.http://dx.doi.org/10.1063/5.0229850 |
| spellingShingle | C. A. Pennington M. Gaowei E. M. Echeverria K. Evans-Lutterodt A. Galdi T. Juffmann S. Karkare J. Maxson S. J. van der Molen P. Saha J. Smedley W. G. Stam R. M. Tromp A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates APL Materials |
| title | A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates |
| title_full | A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates |
| title_fullStr | A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates |
| title_full_unstemmed | A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates |
| title_short | A structural analysis of ordered Cs3Sb films grown on single crystal graphene and silicon carbide substrates |
| title_sort | structural analysis of ordered cs3sb films grown on single crystal graphene and silicon carbide substrates |
| url | http://dx.doi.org/10.1063/5.0229850 |
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