Theory of optical spin-polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength emission. Nonetheless, the pivotal role of electron-phonon coupli...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-03-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.7.013320 |
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