GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE

GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE

Features of a method of thermal crystallization from a discrete liquid source through a little vacuum zone to produce thin ilm Ge/Si heterostructures onto large substrates were investigated. It is established the obtaining conditions for growing of homogeneous in thickness layers. The temperature de...

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Bibliographic Details
Main Authors: Sergei Nikolaevich Chebotarev, Alexey Nikolaevich Yatsenko, Vladimir Nikolaevich Lozovskii, Viktor Pavlovich Popov, Polina Borisovna Seredina, Lidiya Mikhailovna Goncharova
Format: Article
Language:Russian
Published: North Caucasus Federal University 2022-05-01
Series:Вестник Северо-Кавказского федерального университета
Subjects:
кремний-германиевые гетероструктуры
термическая кристаллизация
дискретный источник
germanium-silicon heterostructures
thermal crystallization
discrete source
Online Access:https://vestnikskfu.elpub.ru/jour/article/view/943
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