GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE
Features of a method of thermal crystallization from a discrete liquid source through a little vacuum zone to produce thin ilm Ge/Si heterostructures onto large substrates were investigated. It is established the obtaining conditions for growing of homogeneous in thickness layers. The temperature de...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | Russian |
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North Caucasus Federal University
2022-05-01
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| Series: | Вестник Северо-Кавказского федерального университета |
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| Online Access: | https://vestnikskfu.elpub.ru/jour/article/view/943 |
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| _version_ | 1850046347318657024 |
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| author | Sergei Nikolaevich Chebotarev Alexey Nikolaevich Yatsenko Vladimir Nikolaevich Lozovskii Viktor Pavlovich Popov Polina Borisovna Seredina Lidiya Mikhailovna Goncharova |
| author_facet | Sergei Nikolaevich Chebotarev Alexey Nikolaevich Yatsenko Vladimir Nikolaevich Lozovskii Viktor Pavlovich Popov Polina Borisovna Seredina Lidiya Mikhailovna Goncharova |
| author_sort | Sergei Nikolaevich Chebotarev |
| collection | DOAJ |
| description | Features of a method of thermal crystallization from a discrete liquid source through a little vacuum zone to produce thin ilm Ge/Si heterostructures onto large substrates were investigated. It is established the obtaining conditions for growing of homogeneous in thickness layers. The temperature dependence of structural perfection of germanium layers on silicon substrates and the optimal technological conditions were found. |
| format | Article |
| id | doaj-art-83dd176397684a20b2f7dbf9062be120 |
| institution | DOAJ |
| issn | 2307-907X |
| language | Russian |
| publishDate | 2022-05-01 |
| publisher | North Caucasus Federal University |
| record_format | Article |
| series | Вестник Северо-Кавказского федерального университета |
| spelling | doaj-art-83dd176397684a20b2f7dbf9062be1202025-08-20T02:54:29ZrusNorth Caucasus Federal UniversityВестник Северо-Кавказского федерального университета2307-907X2022-05-01063644941GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCESergei Nikolaevich Chebotarev0Alexey Nikolaevich Yatsenko1Vladimir Nikolaevich Lozovskii2Viktor Pavlovich Popov3Polina Borisovna Seredina4Lidiya Mikhailovna Goncharova5Platov South-Russian State PolytechnicalPlatov South-Russian State PolytechnicalPlatov South-Russian State PolytechnicalPlatov South-Russian State PolytechnicalPlatov South-Russian State PolytechnicalPlatov South-Russian State PolytechnicalFeatures of a method of thermal crystallization from a discrete liquid source through a little vacuum zone to produce thin ilm Ge/Si heterostructures onto large substrates were investigated. It is established the obtaining conditions for growing of homogeneous in thickness layers. The temperature dependence of structural perfection of germanium layers on silicon substrates and the optimal technological conditions were found.https://vestnikskfu.elpub.ru/jour/article/view/943кремний-германиевые гетероструктурытермическая кристаллизациядискретный источникgermanium-silicon heterostructuresthermal crystallizationdiscrete source |
| spellingShingle | Sergei Nikolaevich Chebotarev Alexey Nikolaevich Yatsenko Vladimir Nikolaevich Lozovskii Viktor Pavlovich Popov Polina Borisovna Seredina Lidiya Mikhailovna Goncharova GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE Вестник Северо-Кавказского федерального университета кремний-германиевые гетероструктуры термическая кристаллизация дискретный источник germanium-silicon heterostructures thermal crystallization discrete source |
| title | GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE |
| title_full | GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE |
| title_fullStr | GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE |
| title_full_unstemmed | GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE |
| title_short | GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE |
| title_sort | germanium layers on silicon produced by thermal crystallization from a discrete liquid source |
| topic | кремний-германиевые гетероструктуры термическая кристаллизация дискретный источник germanium-silicon heterostructures thermal crystallization discrete source |
| url | https://vestnikskfu.elpub.ru/jour/article/view/943 |
| work_keys_str_mv | AT sergeinikolaevichchebotarev germaniumlayersonsiliconproducedbythermalcrystallizationfromadiscreteliquidsource AT alexeynikolaevichyatsenko germaniumlayersonsiliconproducedbythermalcrystallizationfromadiscreteliquidsource AT vladimirnikolaevichlozovskii germaniumlayersonsiliconproducedbythermalcrystallizationfromadiscreteliquidsource AT viktorpavlovichpopov germaniumlayersonsiliconproducedbythermalcrystallizationfromadiscreteliquidsource AT polinaborisovnaseredina germaniumlayersonsiliconproducedbythermalcrystallizationfromadiscreteliquidsource AT lidiyamikhailovnagoncharova germaniumlayersonsiliconproducedbythermalcrystallizationfromadiscreteliquidsource |