Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown...

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Bibliographic Details
Main Authors: Vishwajeet Maurya, Daniel Alquier, Hala El Rammouz, Pedro Fernandes Paes Pinto Rocha, Thomas Kaltsounis, Eugénie Martinez, Florian Bartoli, Eric Frayssinet, Yvon Cordier, Matthew Charles, Julien Buckley
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Power Electronic Devices and Components
Subjects:
Vertical GaN
Schottky diode
Surface preparation
Electrical characterizations
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000173
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Summary:In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown voltage (BV) by almost 200 V compared to HF treatment. Additional XPS characterizations reveal a reduction in both O and C concentration from the surface due to TMAH treatment. When combined with proper edge termination techniques, this approach can help achieve breakdown voltages that are closer to the theoretical limits.
ISSN:2772-3704

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