2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts
Abstract Self‐powered photodetectors (SPPDs) are generally carried out in multilayered heterostructures with different semiconductors or in Schottky junctions with different metal electrodes. It is interesting to build an SPPD using metal–semiconductor–metal (MSM) structures with the same type of me...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-12-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202200075 |
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| author | Jinping Chen Zhen Zhang Jiying Feng Xiaoyu Xie Aoqun Jian Yuanzheng Li Heng Guo Yizhi Zhu Zhuxin Li Jianqi Dong Qiannan Cui Zengliang Shi Chunxiang Xu |
| author_facet | Jinping Chen Zhen Zhang Jiying Feng Xiaoyu Xie Aoqun Jian Yuanzheng Li Heng Guo Yizhi Zhu Zhuxin Li Jianqi Dong Qiannan Cui Zengliang Shi Chunxiang Xu |
| author_sort | Jinping Chen |
| collection | DOAJ |
| description | Abstract Self‐powered photodetectors (SPPDs) are generally carried out in multilayered heterostructures with different semiconductors or in Schottky junctions with different metal electrodes. It is interesting to build an SPPD using metal–semiconductor–metal (MSM) structures with the same type of metal electrodes. Here, an SPPD is fabricated facilely by stacking a piece of irregular InSe nanosheet on a pair of Au electrodes with asymmetric van der Waals contacts. The SPPD performs a high responsivity of 0.103 A W−1, a high on‐off current ratio over 104, a high detectivity of 1.83 × 1010 Jones, a fast response time of 1 ms and a broadband sensing spectrum ranging from 300 to 1000 nm under zero bias. A series of characterization and working mechanism analysis demonstrate the contribution of the asymmetric Schottky barrier heights and contact geometries in Au–InSe junctions to the self‐powered performance of the detector. This work offers an effective scheme to construct high‐performance SPPDs in simple architecture and processing for potential optoelectronic device applications. |
| format | Article |
| id | doaj-art-8323d2a7d5b5499f995bb04ee3e61211 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2022-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-8323d2a7d5b5499f995bb04ee3e612112025-08-20T03:31:36ZengWiley-VCHAdvanced Materials Interfaces2196-73502022-12-01935n/an/a10.1002/admi.2022000752D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric ContactsJinping Chen0Zhen Zhang1Jiying Feng2Xiaoyu Xie3Aoqun Jian4Yuanzheng Li5Heng Guo6Yizhi Zhu7Zhuxin Li8Jianqi Dong9Qiannan Cui10Zengliang Shi11Chunxiang Xu12State Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaMicro Nano System Research Center Key Laboratory of Advanced Transducers and Intelligent Control System of the Ministry of Education and College of Information Engineering and Computer Taiyuan University of Technology Taiyuan 030024 ChinaKey Laboratory of UV‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaMicro Nano System Research Center Key Laboratory of Advanced Transducers and Intelligent Control System of the Ministry of Education and College of Information Engineering and Computer Taiyuan University of Technology Taiyuan 030024 ChinaKey Laboratory of UV‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaState Key Laboratory of Bioelectronics School of Biological Science and Medical Engineering Southeast University Nanjing 210096 ChinaAbstract Self‐powered photodetectors (SPPDs) are generally carried out in multilayered heterostructures with different semiconductors or in Schottky junctions with different metal electrodes. It is interesting to build an SPPD using metal–semiconductor–metal (MSM) structures with the same type of metal electrodes. Here, an SPPD is fabricated facilely by stacking a piece of irregular InSe nanosheet on a pair of Au electrodes with asymmetric van der Waals contacts. The SPPD performs a high responsivity of 0.103 A W−1, a high on‐off current ratio over 104, a high detectivity of 1.83 × 1010 Jones, a fast response time of 1 ms and a broadband sensing spectrum ranging from 300 to 1000 nm under zero bias. A series of characterization and working mechanism analysis demonstrate the contribution of the asymmetric Schottky barrier heights and contact geometries in Au–InSe junctions to the self‐powered performance of the detector. This work offers an effective scheme to construct high‐performance SPPDs in simple architecture and processing for potential optoelectronic device applications.https://doi.org/10.1002/admi.2022000752D InSephotoresponseSchottky barrierself‐powered photodetector |
| spellingShingle | Jinping Chen Zhen Zhang Jiying Feng Xiaoyu Xie Aoqun Jian Yuanzheng Li Heng Guo Yizhi Zhu Zhuxin Li Jianqi Dong Qiannan Cui Zengliang Shi Chunxiang Xu 2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts Advanced Materials Interfaces 2D InSe photoresponse Schottky barrier self‐powered photodetector |
| title | 2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts |
| title_full | 2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts |
| title_fullStr | 2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts |
| title_full_unstemmed | 2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts |
| title_short | 2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts |
| title_sort | 2d inse self powered schottky photodetector with the same metal in asymmetric contacts |
| topic | 2D InSe photoresponse Schottky barrier self‐powered photodetector |
| url | https://doi.org/10.1002/admi.202200075 |
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