Water-Soluble Sacrificial Layer of Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> for the Synthesis of Free-Standing Doped Ceria and Strontium Titanate
Epitaxial layers of water-soluble Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> were fabricated as sacrificial layers on SrTiO<sub>3</sub> (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/4/2192 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Epitaxial layers of water-soluble Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> were fabricated as sacrificial layers on SrTiO<sub>3</sub> (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies. |
|---|---|
| ISSN: | 2076-3417 |