Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties
The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2018/9380573 |
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| author | Sarita Boolchandani Subodh Srivastava Y. K. Vijay |
| author_facet | Sarita Boolchandani Subodh Srivastava Y. K. Vijay |
| author_sort | Sarita Boolchandani |
| collection | DOAJ |
| description | The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films. |
| format | Article |
| id | doaj-art-82b3a624a4bc41fc8f32bb752ce5c267 |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-82b3a624a4bc41fc8f32bb752ce5c2672025-08-20T03:37:57ZengWileyJournal of Nanotechnology1687-95031687-95112018-01-01201810.1155/2018/93805739380573Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical PropertiesSarita Boolchandani0Subodh Srivastava1Y. K. Vijay2Vivekananda Global University, Jaipur, IndiaVivekananda Global University, Jaipur, IndiaVivekananda Global University, Jaipur, IndiaThe indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.http://dx.doi.org/10.1155/2018/9380573 |
| spellingShingle | Sarita Boolchandani Subodh Srivastava Y. K. Vijay Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties Journal of Nanotechnology |
| title | Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties |
| title_full | Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties |
| title_fullStr | Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties |
| title_full_unstemmed | Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties |
| title_short | Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties |
| title_sort | preparation of inse thin films by thermal evaporation method and their characterization structural optical and thermoelectrical properties |
| url | http://dx.doi.org/10.1155/2018/9380573 |
| work_keys_str_mv | AT saritaboolchandani preparationofinsethinfilmsbythermalevaporationmethodandtheircharacterizationstructuralopticalandthermoelectricalproperties AT subodhsrivastava preparationofinsethinfilmsbythermalevaporationmethodandtheircharacterizationstructuralopticalandthermoelectricalproperties AT ykvijay preparationofinsethinfilmsbythermalevaporationmethodandtheircharacterizationstructuralopticalandthermoelectricalproperties |