A V-Band Doherty Power Amplifier Based on Voltage Combination and Balance Compensation Marchand Balun
This paper presents a <inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula>-band Doherty power amplifier (PA) which is implemented in a standard 65-nm CMOS technology. The voltage combination technique is used to realize the millimeter-wave Do...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8263225/ |
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| Summary: | This paper presents a <inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula>-band Doherty power amplifier (PA) which is implemented in a standard 65-nm CMOS technology. The voltage combination technique is used to realize the millimeter-wave Doherty PA without the <inline-formula> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula>/4 transmission lines. A Marchand balun with balance compensation is designed to combine the output power with reduced power loss. Moreover, a nonlinear driver is used to drive the peaking amplifier to enhance the output power and the turn-on speed of it. The power-added efficiency (PAE) of this PA at the 6-dB power back-off point is 8.7% and the peak PAE reaches 16.8%. The small signal power gain is 18 dB, and the maximum output power is 14.9 dBm. The core circuit only costs 0.195 mm<sup>2</sup> chip area as no <inline-formula> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula>/4 transmission lines. |
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| ISSN: | 2169-3536 |