Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β -Ga _2 O _3 homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equ...

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Bibliographic Details
Main Authors: Junya Yoshinaga, Yoshiki Iba, Kakeru Kubota, Yuma Terauchi, Takahito Okuyama, Shogo Sasaki, Kazutada Ikenaga, Takeyoshi Onuma, Masataka Higashiwaki, Kazushige Shiina, Shuichi Koseki, Yuzaburo Ban, Yoshinao Kumagai
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
Tetramethylsilane
β-Ga2O3
Low-pressure hot-wall metalorganic vapor phase epitaxy
Online Access:https://doi.org/10.35848/1882-0786/adcfee
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