Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β -Ga _2 O _3 homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equ...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adcfee |
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| Summary: | By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β -Ga _2 O _3 homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equal to the Si concentration was achieved in the range from 1.8 × 10 ^16 to 1.3 × 10 ^19 cm ^–3 . For the layer with a Si concentration and RT electron density of 1.8 × 10 ^16 cm ^–3 , the RT electron mobility of 136 cm ^2 V ^–1 s ^–1 was found to be limited by polar optical phonon scattering. |
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| ISSN: | 1882-0786 |