Yoshinaga, J., Iba, Y., Kubota, K., Terauchi, Y., Okuyama, T., Sasaki, S., . . . Kumagai, Y. Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy. IOP Publishing.
Chicago Style (17th ed.) CitationYoshinaga, Junya, et al. Homoepitaxial Growth of Thick Si-doped β-Ga2O3 Layers Using Tetramethylsilane as a Dopant Source by Low-pressure Hot-wall Metalorganic Vapor Phase Epitaxy. IOP Publishing.
MLA (9th ed.) CitationYoshinaga, Junya, et al. Homoepitaxial Growth of Thick Si-doped β-Ga2O3 Layers Using Tetramethylsilane as a Dopant Source by Low-pressure Hot-wall Metalorganic Vapor Phase Epitaxy. IOP Publishing.
Warning: These citations may not always be 100% accurate.