Time-resolved reflectivity technique: improvement and applications
A new method for determination of the reflectivity of Si in different phase transitions during pulsed laser irradiation is presented in this paper. This method is applied on TRR spectra of crystalline silicon (c-Si) in a medium of oxygen and amorphous hydrogenated silicon (a-Si: H). Time resolved re...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
1999-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/S1110662X99000197 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | A new method for determination of the reflectivity of Si in different phase transitions during
pulsed laser irradiation is presented in this paper. This method is applied on TRR spectra of crystalline silicon
(c-Si) in a medium of oxygen and amorphous hydrogenated silicon (a-Si: H). Time resolved reflectivity
(TRR) measurements on silicon has been made during pulsed XeCl excimer laser irradiation (308 nm, 28nm
FWHM) in a medium of oxygen. The samples were irradiated in the energy density range 400−100mJ/cm2.
The reflectivity was measured with a probe He-Ne laser (632.8 nm). Depending on the energy density of the
excimer pulse, heating, melting and resolidification of the surface were monitored by TRR spectra. From
these measurements we were able to determine the melting threshold energy density for c-Si, depending on
the energy densities, time of melting and maximum reflectivity have been measured. TRR spectra of a sample
with 3μm thick a-Si layer for first shot of measurements were calibrated. A series of a-Si: H samples of the
same thickness (0.34 μm) irradiated with a constant energy density 450mJ/cm2 and the three consecutive
TRR spectra of the irradiated samples were calibrated. |
|---|---|
| ISSN: | 1110-662X |