Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn
Abstract Topological semimetal materials have attracted a great deal of attention due to their intrinsic strong spin-orbit coupling, which leads to large charge-to-spin conversion efficiency and novel spin transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BME...
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| Language: | English |
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Nature Portfolio
2024-07-01
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| Series: | npj Spintronics |
| Online Access: | https://doi.org/10.1038/s44306-024-00036-1 |
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| author | Yihong Fan Zach Cresswell Yifei Yang Wei Jiang Yang Lv Thomas J. Peterson Delin Zhang Jinming Liu Tony Low Jian-Ping Wang |
| author_facet | Yihong Fan Zach Cresswell Yifei Yang Wei Jiang Yang Lv Thomas J. Peterson Delin Zhang Jinming Liu Tony Low Jian-Ping Wang |
| author_sort | Yihong Fan |
| collection | DOAJ |
| description | Abstract Topological semimetal materials have attracted a great deal of attention due to their intrinsic strong spin-orbit coupling, which leads to large charge-to-spin conversion efficiency and novel spin transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.0034 nm2A−1Oe−1 in a single layer of sputtered semimetal Pt3Sn at room temperature. Being different from previous works, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of the Pt3Sn layer. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices. |
| format | Article |
| id | doaj-art-824efd56455b41f1bfc8cd1e6af63386 |
| institution | OA Journals |
| issn | 2948-2119 |
| language | English |
| publishDate | 2024-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Spintronics |
| spelling | doaj-art-824efd56455b41f1bfc8cd1e6af633862025-08-20T01:57:25ZengNature Portfolionpj Spintronics2948-21192024-07-01211610.1038/s44306-024-00036-1Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3SnYihong Fan0Zach Cresswell1Yifei Yang2Wei Jiang3Yang Lv4Thomas J. Peterson5Delin Zhang6Jinming Liu7Tony Low8Jian-Ping Wang9Department of Electrical and Computer Engineering, University of MinnesotaDepartment of Chemical Engineering and Materials Science, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaSchool of Physics and Astronomy, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaDepartment of Electrical and Computer Engineering, University of MinnesotaAbstract Topological semimetal materials have attracted a great deal of attention due to their intrinsic strong spin-orbit coupling, which leads to large charge-to-spin conversion efficiency and novel spin transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.0034 nm2A−1Oe−1 in a single layer of sputtered semimetal Pt3Sn at room temperature. Being different from previous works, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of the Pt3Sn layer. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.https://doi.org/10.1038/s44306-024-00036-1 |
| spellingShingle | Yihong Fan Zach Cresswell Yifei Yang Wei Jiang Yang Lv Thomas J. Peterson Delin Zhang Jinming Liu Tony Low Jian-Ping Wang Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn npj Spintronics |
| title | Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn |
| title_full | Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn |
| title_fullStr | Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn |
| title_full_unstemmed | Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn |
| title_short | Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn |
| title_sort | observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal pt3sn |
| url | https://doi.org/10.1038/s44306-024-00036-1 |
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