The Local Electron Scattering on the Lattice Defects in InSb and InN

In proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3...

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Bibliographic Details
Main Author: O.P. Malyk
Format: Article
Language:English
Published: Sumy State University 2016-06-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02018.pdf
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