The Local Electron Scattering on the Lattice Defects in InSb and InN

In proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3...

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Main Author: O.P. Malyk
Format: Article
Language:English
Published: Sumy State University 2016-06-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02018.pdf
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author O.P. Malyk
author_facet O.P. Malyk
author_sort O.P. Malyk
collection DOAJ
description In proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3. In the framework of the analytical solution of the stationary kinetic Boltzmann equation using the short-range principle the temperature dependences of electron mobility, Hall factor and thermoelectric power in indium antimonide in the temperature range 8-700 K are calculated. For indium nitride crystal the temperature dependences of electron mobility and Hall factor in the interval 4.2-560 K are presented.
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series Журнал нано- та електронної фізики
spelling doaj-art-820d0e41d8c9455bb2040efda109a1482025-08-20T03:06:46ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722016-06-018202018-102018-710.21272/jnep.8(2).02018The Local Electron Scattering on the Lattice Defects in InSb and InNO.P. Malyk0Lviv Polytechnic National University, 1, Square of St. George, 79013 Lviv, UkraineIn proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3. In the framework of the analytical solution of the stationary kinetic Boltzmann equation using the short-range principle the temperature dependences of electron mobility, Hall factor and thermoelectric power in indium antimonide in the temperature range 8-700 K are calculated. For indium nitride crystal the temperature dependences of electron mobility and Hall factor in the interval 4.2-560 K are presented.http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02018.pdfTransport phenomenaIndium antimonideIndium nitrid
spellingShingle O.P. Malyk
The Local Electron Scattering on the Lattice Defects in InSb and InN
Журнал нано- та електронної фізики
Transport phenomena
Indium antimonide
Indium nitrid
title The Local Electron Scattering on the Lattice Defects in InSb and InN
title_full The Local Electron Scattering on the Lattice Defects in InSb and InN
title_fullStr The Local Electron Scattering on the Lattice Defects in InSb and InN
title_full_unstemmed The Local Electron Scattering on the Lattice Defects in InSb and InN
title_short The Local Electron Scattering on the Lattice Defects in InSb and InN
title_sort local electron scattering on the lattice defects in insb and inn
topic Transport phenomena
Indium antimonide
Indium nitrid
url http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02018.pdf
work_keys_str_mv AT opmalyk thelocalelectronscatteringonthelatticedefectsininsbandinn
AT opmalyk localelectronscatteringonthelatticedefectsininsbandinn