The Local Electron Scattering on the Lattice Defects in InSb and InN
In proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3...
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| Format: | Article |
| Language: | English |
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Sumy State University
2016-06-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02018.pdf |
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| Summary: | In proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3. In the framework of the analytical solution of the stationary kinetic Boltzmann equation using the short-range principle the temperature dependences of electron mobility, Hall factor and thermoelectric power in indium antimonide in the temperature range 8-700 K are calculated. For indium nitride crystal the temperature dependences of electron mobility and Hall factor in the interval 4.2-560 K are presented. |
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| ISSN: | 2077-6772 |