Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes
Abstract Inspired by the promising properties of monolayer 1T-VSe2, known for its ferromagnetic ordering and room-temperature Curie point, we developed a 2D van der Waals heterostructure featuring 1T-VSe2 as the ferromagnetic layer, non-magnetic semi-infinite 1T- and 2H-TaS2 electrodes, and 2H-MoS2...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00560-6 |
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| Summary: | Abstract Inspired by the promising properties of monolayer 1T-VSe2, known for its ferromagnetic ordering and room-temperature Curie point, we developed a 2D van der Waals heterostructure featuring 1T-VSe2 as the ferromagnetic layer, non-magnetic semi-infinite 1T- and 2H-TaS2 electrodes, and 2H-MoS2 as the tunneling barrier. Employing ab initio quantum transport simulations within the nonequilibrium Green’s function framework, we explored the impact of TaS2 electrode polytypes on the device’s quantum transport properties. Devices with 1T-TaS2 electrodes exhibit higher spin-dependent transmission compared to 2H-TaS2. Incorporating 2H-MoS2 enhances anisotropic tunnel magnetoresistance, reaching 168% for the 1T-device and 1419% for the 2H-device, peaking when 1T-VSe2 magnetizations are antiparallel. Spin-transfer torque magnitude is highest at 90° and decreases towards 180°. 1T-device shows superior performance with lower Gilbert damping, and reduced critical current density and voltage for magnetization switching, compared to the 2H-device, which requires significantly higher current and voltage. These findings underscore the potential of 1T-VSe2-based heterostructures in spintronics. |
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| ISSN: | 2397-7132 |