Next generation of ICeGaNⓇ for superior no load and light load performance

Next generation of ICeGaNⓇ for superior no load and light load performance

The ICeGaNⓇ technology aims at enabling widespread adoption of GaN HEMTs in power applications through a monolithic solution that offers an increased VGS(th) (2.9 V) and a wide ON-state gate driving range of 9 V to 20 V. This makes it compatible with industry standard Si gate-driver ICs and controll...

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Bibliographic Details
Main Authors: Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Power Electronic Devices and Components
Subjects:
GaN
GaN HEMT
No-load
Consumer applications
Reliability
Robustness
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000094
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