Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4
Abstract Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-10-01
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| Series: | npj Quantum Materials |
| Online Access: | https://doi.org/10.1038/s41535-024-00694-8 |
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| author | Liangcai Xu Zichen Lian Yongchao Wang Xinlei Hao Shuai Yang Yongqian Wang Chang Liu Yang Feng Yayu Wang Jinsong Zhang |
| author_facet | Liangcai Xu Zichen Lian Yongchao Wang Xinlei Hao Shuai Yang Yongqian Wang Chang Liu Yang Feng Yayu Wang Jinsong Zhang |
| author_sort | Liangcai Xu |
| collection | DOAJ |
| description | Abstract Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and nonlinear Hall effect in MnBi2Te4, an intrinsic magnetic topological insulator, induced by the quantum metric dipole. However, the inconsistent response with charge density and conflicting C3z symmetry requirement necessitate a thorough understanding of factors affecting the nonlinear transport measurement. This study uncovers an experimental factor leading to significant nonlinear transport signals in MnBi2Te4, attributed to gate voltage oscillation from the application of large alternating current. Additionally, a methodology is proposed to suppress this effect by individually grounding the voltage electrodes during second-harmonic measurements. The investigation underscores the critical importance of assessing gate voltage oscillation’s impact before determining the intrinsic nature of nonlinear transport in 2D material devices with an electrically connected operative gate electrode. |
| format | Article |
| id | doaj-art-7fb4ea9fb42448f4bba6a4a56951b329 |
| institution | OA Journals |
| issn | 2397-4648 |
| language | English |
| publishDate | 2024-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Quantum Materials |
| spelling | doaj-art-7fb4ea9fb42448f4bba6a4a56951b3292025-08-20T02:17:40ZengNature Portfolionpj Quantum Materials2397-46482024-10-01911710.1038/s41535-024-00694-8Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4Liangcai Xu0Zichen Lian1Yongchao Wang2Xinlei Hao3Shuai Yang4Yongqian Wang5Chang Liu6Yang Feng7Yayu Wang8Jinsong Zhang9State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua UniversityBeijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of ChinaBeijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of ChinaBeijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of ChinaBeijing Academy of Quantum Information SciencesState Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua UniversityAbstract Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and nonlinear Hall effect in MnBi2Te4, an intrinsic magnetic topological insulator, induced by the quantum metric dipole. However, the inconsistent response with charge density and conflicting C3z symmetry requirement necessitate a thorough understanding of factors affecting the nonlinear transport measurement. This study uncovers an experimental factor leading to significant nonlinear transport signals in MnBi2Te4, attributed to gate voltage oscillation from the application of large alternating current. Additionally, a methodology is proposed to suppress this effect by individually grounding the voltage electrodes during second-harmonic measurements. The investigation underscores the critical importance of assessing gate voltage oscillation’s impact before determining the intrinsic nature of nonlinear transport in 2D material devices with an electrically connected operative gate electrode.https://doi.org/10.1038/s41535-024-00694-8 |
| spellingShingle | Liangcai Xu Zichen Lian Yongchao Wang Xinlei Hao Shuai Yang Yongqian Wang Chang Liu Yang Feng Yayu Wang Jinsong Zhang Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4 npj Quantum Materials |
| title | Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4 |
| title_full | Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4 |
| title_fullStr | Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4 |
| title_full_unstemmed | Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4 |
| title_short | Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4 |
| title_sort | second harmonic generation induced by gate voltage oscillation in few layer mnbi2te4 |
| url | https://doi.org/10.1038/s41535-024-00694-8 |
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