Capacitance of Film Structures Including Graphitic Carbon Nitride
Al/g-C3N4/Si/Al, Al/g-C3N4/SiO2/Si/Al, Al/g-C3N4/Al and Al/g-C3N4/Al2O3/Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C3N4) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO2 or Al2O3 – and Al...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-12-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/4017 |
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| author | V. T. Pham S. E. Maximov E. A. Utkina E. B. Chubenko V. E. Borisenko |
| author_facet | V. T. Pham S. E. Maximov E. A. Utkina E. B. Chubenko V. E. Borisenko |
| author_sort | V. T. Pham |
| collection | DOAJ |
| description | Al/g-C3N4/Si/Al, Al/g-C3N4/SiO2/Si/Al, Al/g-C3N4/Al and Al/g-C3N4/Al2O3/Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C3N4) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO2 or Al2O3 – and Al contacts deposited on the surface. Their capacitance-voltage characteristics and frequency dependence of the capacitance were measured at room temperature. It was found that the permittivity of g-C3N4 is 14 in structures on silicon and 9–10 in structures on aluminum. The decrease in permittivity is explained by the formation of Al2O3 at the g-C3N4/Al boundary during the deposition of g-C3N4, as indicated by the results of the X-ray diffraction analysis of the formed samples. |
| format | Article |
| id | doaj-art-7f52df5509bc4bd7bb5bb4a59716d19e |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2024-12-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-7f52df5509bc4bd7bb5bb4a59716d19e2025-08-20T04:00:43ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482024-12-0122651310.35596/1729-7648-2024-22-6-5-132030Capacitance of Film Structures Including Graphitic Carbon NitrideV. T. Pham0S. E. Maximov1E. A. Utkina2E. B. Chubenko3V. E. Borisenko4Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsAl/g-C3N4/Si/Al, Al/g-C3N4/SiO2/Si/Al, Al/g-C3N4/Al and Al/g-C3N4/Al2O3/Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C3N4) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO2 or Al2O3 – and Al contacts deposited on the surface. Their capacitance-voltage characteristics and frequency dependence of the capacitance were measured at room temperature. It was found that the permittivity of g-C3N4 is 14 in structures on silicon and 9–10 in structures on aluminum. The decrease in permittivity is explained by the formation of Al2O3 at the g-C3N4/Al boundary during the deposition of g-C3N4, as indicated by the results of the X-ray diffraction analysis of the formed samples.https://doklady.bsuir.by/jour/article/view/4017filmcarbon nitridealuminium oxidesilicon oxidecapacitance |
| spellingShingle | V. T. Pham S. E. Maximov E. A. Utkina E. B. Chubenko V. E. Borisenko Capacitance of Film Structures Including Graphitic Carbon Nitride Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki film carbon nitride aluminium oxide silicon oxide capacitance |
| title | Capacitance of Film Structures Including Graphitic Carbon Nitride |
| title_full | Capacitance of Film Structures Including Graphitic Carbon Nitride |
| title_fullStr | Capacitance of Film Structures Including Graphitic Carbon Nitride |
| title_full_unstemmed | Capacitance of Film Structures Including Graphitic Carbon Nitride |
| title_short | Capacitance of Film Structures Including Graphitic Carbon Nitride |
| title_sort | capacitance of film structures including graphitic carbon nitride |
| topic | film carbon nitride aluminium oxide silicon oxide capacitance |
| url | https://doklady.bsuir.by/jour/article/view/4017 |
| work_keys_str_mv | AT vtpham capacitanceoffilmstructuresincludinggraphiticcarbonnitride AT semaximov capacitanceoffilmstructuresincludinggraphiticcarbonnitride AT eautkina capacitanceoffilmstructuresincludinggraphiticcarbonnitride AT ebchubenko capacitanceoffilmstructuresincludinggraphiticcarbonnitride AT veborisenko capacitanceoffilmstructuresincludinggraphiticcarbonnitride |