Sulfide Passivation of Indium Phosphide Porous Surfaces
The paper describes the effect of the chemical treatment of porous indium phosphide in sulfide solutions on the photoluminescence spectrum. It was shown that the surface sulfiding samples leads to a state of inertia with respect to oxygen. It is found that the thin crystal film is formed of a chemic...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-02-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01006.pdf |
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| _version_ | 1849408877516292096 |
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| author | Y.O. Suchikova |
| author_facet | Y.O. Suchikova |
| author_sort | Y.O. Suchikova |
| collection | DOAJ |
| description | The paper describes the effect of the chemical treatment of porous indium phosphide in sulfide solutions on the photoluminescence spectrum. It was shown that the surface sulfiding samples leads to a state of inertia with respect to oxygen. It is found that the thin crystal film is formed of a chemically inert material during chalcogenide passivation por-InP removes oxide layer instead. |
| format | Article |
| id | doaj-art-7efaaad098ad4cfb89653012014119ab |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-02-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-7efaaad098ad4cfb89653012014119ab2025-08-20T03:35:40ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-02-019101006-101006-410.21272/jnep.9(1).01006Sulfide Passivation of Indium Phosphide Porous SurfacesY.O. Suchikova0Berdyansk State Pedagogical University, 4, Schmidt st., 71100 Berdyansk, UkraineThe paper describes the effect of the chemical treatment of porous indium phosphide in sulfide solutions on the photoluminescence spectrum. It was shown that the surface sulfiding samples leads to a state of inertia with respect to oxygen. It is found that the thin crystal film is formed of a chemically inert material during chalcogenide passivation por-InP removes oxide layer instead.http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01006.pdfPorous indium phosphidePassivationChalcogenidesPhotoluminescenceSulfate solutionOxide |
| spellingShingle | Y.O. Suchikova Sulfide Passivation of Indium Phosphide Porous Surfaces Журнал нано- та електронної фізики Porous indium phosphide Passivation Chalcogenides Photoluminescence Sulfate solution Oxide |
| title | Sulfide Passivation of Indium Phosphide Porous Surfaces |
| title_full | Sulfide Passivation of Indium Phosphide Porous Surfaces |
| title_fullStr | Sulfide Passivation of Indium Phosphide Porous Surfaces |
| title_full_unstemmed | Sulfide Passivation of Indium Phosphide Porous Surfaces |
| title_short | Sulfide Passivation of Indium Phosphide Porous Surfaces |
| title_sort | sulfide passivation of indium phosphide porous surfaces |
| topic | Porous indium phosphide Passivation Chalcogenides Photoluminescence Sulfate solution Oxide |
| url | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01006.pdf |
| work_keys_str_mv | AT yosuchikova sulfidepassivationofindiumphosphideporoussurfaces |